Publications

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

[Invited] The electro-magneto-elastic Eshelby tensor : applications to homogenization methods and nano-structures

S. Giordano, Yannick Dusch, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky

Colloque National MECAMAT, 2012, Aussois, France. pp.1-13. ⟨hal-00806603⟩

• Communication dans un congrès

Déplacement d'une goutte soumise à des ondes acoustique de surface (SAW) : étude de l'influence de la gravité sur le déplacement

Adrien Bussonnière, Michael Baudoin, Olivier Bou Matar

15èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, JNRDM 2012, 2012, Marseille, France. pp.1-4. ⟨hal-00806604⟩

• Article dans une revue

Exploitation of acoustic noise correlation for structural health monitoring applications

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Many recent studies in different domains exploited the ambient noise correlation to retrieve the Green's function between two points. This technique allows a passive characterization of a given medium in the presence of a perfect diffuse field. The aim of this paper is to apply this principle…

Open Acoustics Journal, 2012, 5, pp.23-31. ⟨10.2174/1874837601205010023⟩. ⟨hal-00790362⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - II. Vibrational distribution of N2(C3Πu, v') state

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055022-1-11. ⟨hal-00790407⟩

• Article dans une revue

Monte Carlo simulations of single polymer force-extension relations

F. Manca, S. Giordano, Pier Luca Palla, F. Cleri, L. Colombo

Journal of Physics: Conference Series, 2012, 383, pp.012016-1-6. ⟨10.1088/1742-6596/383/1/012016⟩. ⟨hal-00790417⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of N2-Ar mixture discharge created by a RF helical coupling device - I. Kinetics of N2(B3Πg) and N2(C3Πu) states

C. Foissac, J. Kristof, A. Annusova, P. Veis, P. Supiot

Plasma Sources Science and Technology, 2012, 21, pp.055021-1-11. ⟨hal-00790405⟩

• Article dans une revue

Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes

A. Khatab, M. Shafi, R.H. Mari, M. Aziz, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S. Wang

Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9, pp.1621-1623. ⟨10.1002/pssc.201100581⟩. ⟨hal-00790437⟩

• Article dans une revue

Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, Y. Cordier, Jean-Claude de Jaeger

Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩. ⟨hal-00790433⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is…

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩