Publications
Affichage de 8741 à 8750 sur 16278
Interface engineering of PCM for improved synaptic performance in neuromorphic systems
M. Suri, O. Bichler, Q. Hubert, L. Perniola, V. Sousa, C. Jahan, D. Vuillaume, C. Gamrat, B. de Salvo
4th IEEE International Memory Workshop, IMW 2012, 2012, Milano, Italy. pp.1-4, ⟨10.1109/IMW.2012.6213674⟩. ⟨hal-00801096⟩
RF operation of InAs quantum hot electron transistors
H. Nguyen Van, A. N. Baranov, M. Zaknoune, R. Teissier
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801051⟩
Graphene layers grown by RTP-CVD on nickel and their properties
H. Kim, E. Pichonat, D. Vignaud, D. Pavlidis, H. Happy
11th Expert Meeting on Evaluation and Control of Coumpound Semiconductor Materials & Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801046⟩
Magnetic and electric coupling effects of dielectric metamaterial
F. Zhang, L. Kang, Q. Zhao, J. Zhou, D. Lippens
New Journal of Physics, 2012, 14, pp.033031-1-15. ⟨10.1088/1367-2630/14/3/033031⟩. ⟨hal-00786984⟩
480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design
M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher
IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩
Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy
Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart
Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩
Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces
Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart
EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
T. Xu, K.A. Dick, S.R. Plissard, T.H. Nguyen, Y. Makoudi, Maxime Berthe, J.P. Nys, X. Wallart, B. Grandidier, P. Caroff
Nanotechnology, 2012, 23, pp.095702-1-9. ⟨10.1088/0957-4484/23/9/095702⟩. ⟨hal-00787477⟩
435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing
S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink
Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩
A 10 Gb/s 45 mW adaptive 60 GHz baseband in 65 nm CMOS
C. Thakkar, L. Kong, K. Jung, A. Frappe, E. Alon
IEEE Journal of Solid-State Circuits, 2012, 47, pp.952-968. ⟨10.1109/JSSC.2012.2184651⟩. ⟨hal-00787383⟩