Publications

• Communication dans un congrès

[Invited] Inhibiting biofouling in EWOD device for SPR applications

G. Perry, Yannick Coffinier, V. Thomy, Rabah Boukherroub

2nd Workshop on Frontiers in Biological Detection, PLASMOBIO 2012, 2012, Mons, Belgium. ⟨hal-00798240⟩

• Communication dans un congrès

Dual phononic and photonic strip waveguides

Yan Pennec

SPIE 2012 Photonics West, Photonic and Phononic Properties of Engineered Nanostructures II, 2012, San Francisco, CA, United States. ⟨hal-00798098⟩

• Communication dans un congrès

THz applications at room temperature based on self switch diodes using wide bandgap material

Christophe Gaquière, Guillaume Ducournau, P. Sangare, B. Grimbert, M. Faucher, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonzalez, J. Mateos

IEEE IMS Workshops & Short Courses : THz Devices and Systems Based on Nanotechnology, 2012, Montréal, Canada. ⟨hal-00798262⟩

• Communication dans un congrès

Phononic and phoxonic crystal slabs sensors

Bahram Djafari-Rouhani, Yan Pennec, R. Lucklum

SPIE Photonics Europe, Photonic Crystal Materials and Devices, 2012, Brussels, Belgium. ⟨hal-00798094⟩

• Article dans une revue

Elastic behaviour of inhomogeneities with size and shape different from their hosting cavities

S. Giordano, Pier Luca Palla, E. Cadelano, M. Brun

Mechanics of Materials, 2012, 44, pp.4-22. ⟨10.1016/j.mechmat.2011.07.015⟩. ⟨hal-00639826⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-5, ⟨10.1109/ICEngTechnol.2012.6396129⟩. ⟨hal-00801158⟩

• Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

• Communication dans un congrès

DNA origami imaging with 10.9 MHz AFM MEMS probes

B. Walter, E. Mairiaux, Z. Xiong, M. Faucher, L. Buchaillot, Bernard Legrand

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.555-558, ⟨10.1109/MEMSYS.2012.6170236⟩. ⟨hal-00801107⟩