Publications

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited…

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩

• Article dans une revue

Structural investigation of TbCo2/Fe magnetostrictive thin films by tomographic atom probe and Mössbauer spectrometry

A. Grenier, R. Lardé, E. Cadel, J.M. Le Breton, J. Juraszek, F. Vurpillot, Nicolas Tiercelin, Philippe Pernod, J. Teillet

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2215-2216. ⟨10.1016/j.jmmm.2006.10.1102⟩. ⟨hal-00285631⟩

• Article dans une revue

Covalent functionalization of silicon nitride surfaces by semicarbazide group

Yannick Coffinier, Rabah Boukherroub, X. Wallart, J.P. Nys, J.O. Durand, D. Stiévenard, B. Grandidier

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601, pp.5492-5498. ⟨10.1016/j.susc.2007.09.017⟩. ⟨hal-00283127⟩

• Communication dans un congrès

Transmission simultanée d'un signal bande étroite radio UMTS à 2GHz et d'un signal numérique à 1,25Gbit/s en bande de base sur fibre multimode pour des applications multiservices par multiplexage optique faible distance

C. Sion, Christophe Loyez, Jean-Pierre Vilcot, C. Lethien, A. Goffin

TELECOM'2007 & 5èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2007, Fès, Maroc. ⟨hal-00285267⟩

• Communication dans un congrès

Mesure de signaux réfléchis de faible amplitude dans un canal multitrajet

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delaï

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.4D14-1-4. ⟨hal-00370305⟩

• Communication dans un congrès

Blind equalization applied to radio over fiber system for 60 GHz high data rate WLAN

A. Zaouche, Christophe Loyez, C. Lethien, N. Rolland, P.A. Rolland, Iyad Dayoub, Jean-Michel Rouvaen

Proceedings of the 4th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2007, 2007, Hammamet, Tunisia. ⟨hal-00366995⟩

• Article dans une revue

Characteristics of Al2O3/AllnN/GaN MOSHEMT

F Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M.A. Di Forte-Poisson, M. Knez, E. Delos, Christophe Gaquière, S.L. Delage, E. Kohn

Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩. ⟨hal-00283495⟩

• Article dans une revue

A blind modulation type detector for DPRS standard

Iyad Dayoub, A. Okassa-M'Foubat, R. Mvone, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 41, pp.225-241. ⟨10.1007/s11277-006-9140-8⟩. ⟨hal-00283515⟩

• Article dans une revue

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Francois Vaurette, J.P. Nys, B. Grandidier, C. Priester, D. Stiévenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.235435-1-6. ⟨10.1103/PhysRevB.75.235435⟩. ⟨hal-00283122⟩

• Article dans une revue

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Malek Zegaoui, Joseph Harari, Nargess Choueib, V. Magnin, Didier Decoster

The ability of HSQ resist films to planarise active deep etched (1.5-2m) InP based structures with electrodes is demonstrated for the first time. Vertically etched III-V semiconductor devices require planarisation of the passivation material for metal interconnections and device integration. A new…

Electronics Letters, 2007, 43 (22), pp.1234-1236. ⟨10.1049/el:20071889⟩. ⟨hal-00283081⟩