Publications

Affichage de 13031 à 13040 sur 16551


  • Communication dans un congrès

Silicon nanotweezers with adjustable and controlable gap for the manipulation and characterization of DNA molecules

C. Yamahata, T. Takekawa, K. Ayano, M. Hosogi, M. Kumemura, Bernard Legrand, D. Collard, G. Hashiguchi, H. Fujita

2006, 4 pp. ⟨hal-00147724⟩

  • Communication dans un congrès

Homodyne dual six-port network analyzer and associated calibration technique for millimeter wave measurement

Kamel Haddadi, D. Glay, T. Lasri

2006, 4 pp. ⟨hal-00126826⟩

  • Article dans une revue

Thickness dependent morphology and resistivity of ultra-thin Al films growth on Si(111) by molecular beam epitaxy

D.K. Aswal, N. Joshi, A.K. Debnath, D.S. Gupta, D. Vuillaume, J.V. Yakhmi

Physica Status Solidi A (applications and materials science), 2006, 203, pp.1254-1258. ⟨hal-00127112⟩

  • Article dans une revue

Self assembled monolayers on silicon for molecular electronics

D.K. Aswal, S. Lenfant, David Guérin, J.V. Yakhmi, D. Vuillaume

Analytica Chimica Acta, 2006, 568, pp.84-108. ⟨hal-00127116⟩

  • Article dans une revue

Langmuir–Blodgett monolayers of InP quantum dots with short chain ligands

K. Lambert, L. Wittebrood, I. Moreels, D. Deresmes, B. Grandidier, Z. Hens

Journal of Colloid and Interface Science, 2006, 15, pp.597. ⟨hal-00127837⟩

  • Article dans une revue

Phonon instability in nanocrystalline silicon carbide

F. Cleri, T. Noda

physica status solidi (b), 2006, 243, pp.122-124. ⟨hal-00127852⟩

  • Article dans une revue

Excitons in boron nitride nanotubes : dimensionality effects

L. Wirtz, A. Marini, A. Rubio

Physical Review Letters, 2006, 96, pp.126104/1-4. ⟨hal-00127833⟩

  • Article dans une revue

Raman spectroscopy of single-wall boron nitride nanotubes

R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau

Nano Letters, 2006, 6, pp.1812-1816. ⟨hal-00127851⟩

  • Article dans une revue

An open design microfabricated nib-like nanoelectrospray emitter tip on a conduction silicon substrate for the application of the ionization voltage

S. Le Gac, C. Rolando, S. Arscott

Journal of The American Society for Mass Spectrometry, 2006, 17, pp.75-80. ⟨hal-00128664⟩

  • Communication dans un congrès

Large signal microwave characterization of GaN HEMTs

D. Theron, M. Werquin, B. Grimbert, D. Ducatteau, S. Vandenbrouck, Christophe Gaquière

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD'06, 2006, Phoenix, AZ, United States. ⟨hal-00128163⟩