Publications

• Article dans une revue

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Matej Pastorek, Aurélien Olivier, Yoann Lechaux, Nicolas Wichmann, Theano Karatsori, Maria Fahed, Alexandre Bucamp, Ahmed Addad, David Troadec, Gérard Ghibaudo, L. Desplanque, Xavier Wallart, S. Bollaert

In this paper we report on the fabrication and electrical characterization of InAs-on-nothing metal-oxide-semiconductor field-effect transistor composed of a suspended InAs channel and raised InAs n+ contacts. This architecture is obtained using 3D selective and localized molecular beam epitaxy on…

Nanotechnology, 2019, 30 (3), pp.035301. ⟨10.1088/1361-6528/aaebbd⟩. ⟨hal-01955057⟩

• Communication dans un congrès

RF and microwave sensing methods and instruments for nondestructive testing and evaluation

Kamel Haddadi

2nd International Seminar on Environmental Sustainability, Disaster Prevention and Reduction, and Engineering Education, ESDPR&EE 2019, Jan 2019, Gifu, Japan. 13 p. ⟨hal-03219999⟩

• Article dans une revue

Cu(0) nanoparticle-decorated functionalized reduced graphene oxide sheets as artificial peroxidase enzymes: application for colorimetric detection of Cr( vi ) ions

Priyakshree Borthakur, Purna Boruah, Manash R. Das, Sabine Szunerits, Rabah Boukherroub

New Journal of Chemistry, 2019, 43 (3), pp.1404-1414. ⟨10.1039/c8nj05363d⟩. ⟨hal-02373238⟩

• Brevet

Générateur thermoélectrique

Emmanuel Dubois, Jean-François Robillard, Stéphane Monfray, Thomas Skotnicki

China, Patent n° : CN105655473 (B) 2019-01-08. 2019, N° de priorité : FR20140061760 20141202 - N° de demande : CN201510614149 20150923. ⟨hal-05696638⟩

• Article dans une revue

Love waves dispersion by phononic pillars for nano-particle mass sensing

Jérémy Bonhomme, Mourad Oudich, Bahram Djafari-Rouhani, Frédéric Sarry, Yan Pennec, B. Bonello, Denis Beyssen, P. Charette

We present a design of a pillared phononic crystal based structure for Love wave manipulation to achieve high mass sensitivity. The structure is made of phononic micro-pillars constructed by stacking tungsten and SiO2 layers, distributed on a substrate designed for Love wave propagation. The…

Applied Physics Letters, 2019, 114 (1), pp.013501. ⟨10.1063/1.5068681⟩. ⟨hal-02074727⟩

• Chapitre d'ouvrage

Electron Beam Curing of Monomer/Liquid Crystal Blends

Mohammed Bouchakour, Yazid Derouiche, Zohra Bouberka, Christophe Beyens, Philippe Supiot, Frédéric Dubois, Farid Riahi, Ulrich Maschke

This chapter focuses on a comparison of two polymerization/crosslinking methods to produce polymer/liquid crystal (LC) systems: rapid UV-visible irradiation and high voltage accelerated electron beams (EB), with comparable exposure times. The comparison was performed in terms of some physical…

Ingo Dierking. Polymer-modified Liquid Crystals, The Royal Society of Chemistry, pp.45-60, 2019, 9781782629825. ⟨10.1039/9781788013321-00045⟩. ⟨hal-04457627⟩

• Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

• Article dans une revue

Y-shaped magnonic demultiplexer using induced transparency resonances

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We give an analytical demonstration of the possibility to realize a simple magnonic demultiplexer based on induced transparency resonances. The demultiplexer consists on an Y-shaped waveguide with an input line and two output lines. Each line contains two grafted stubs at a given position far from…

AIP Advances, 2019, 9 (3), pp.035011. ⟨10.1063/1.5080350⟩. ⟨hal-03143601⟩

• Article dans une revue

Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Wafa Bellil, Abdelkader Aissat, Jean-Pierre Vilcot

In this work we study and optimize the single solar cell efficiency of GaNxAs1-x-ySby and Ga1-xInxNyAs1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaNxAs1-x-ySby, and indium and nitrogen for Ga1-xInxNyAs1-y which gives us…

Procedia Computer Science, 2019, Procedia Computer Science, 151, pp.1028-1033. ⟨10.1016/j.procs.2019.04.145⟩. ⟨hal-02409552⟩

• Article dans une revue

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩