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Communication dans un congrès

Développement de solutions hyperfréquences pour la société moderne: bio-radar et microscopie électromagnétique

Kamel Haddadi, D. Szymik, Virginie Hoel, Gilles Dambrine

Cet article décrit le projet de fin d’étude mis au point au sein du Master Réseaux et Télécommunications parcours SYSCOM (Systèmes Communicants) de l’Université de Lille. Le projet vise à développer des solutions hyperfréquences pour la ville intelligente (Smart City). Les développements techniques…

15èmes Journées Pédagogiques du CNFM, JPCNFM 2018, Nov 2018, Saint-Malo, France. 1013, 9 p., ⟨10.1051/j3ea/20191013⟩. ⟨hal-03340538⟩

Communication dans un congrès

Plasmon induced transparency in graphene-based side coupled two rectangular nano-cavities-like structures

A. Noual, M. Amrani, E.H. El Boudouti, Yan Pennec, Bahram Djafari-Rouhani

We investigate numerically the plasmon analogue of electromagnetic induced transparency (EIT) in a compact graphene-based waveguide coupled to two rectangular nano-cavities-like structures made out of graphene nanoribbons. The cavities are placed symmetrically on each side of the bus waveguide,…

2018 International Conference on Materials and Environmental Science, ICMES 2018, Apr 2018, Saidia, Morocco. pp.1076-1083, ⟨10.1016/j.matpr.2019.04.074⟩. ⟨hal-03508191⟩

Article dans une revue

High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub

We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 μA/mm, a high breakdown voltage and a F T /F max…

IEEE Journal of the Electron Devices Society, 2019, 7, pp.1145-1150. ⟨10.1109/JEDS.2019.2952314⟩. ⟨hal-02357492⟩

Article dans une revue

Plasmon-Induced Electrocatalysis with Multi-Component Nanostructures

Palaniappan Subramanian, Dalila Meziane, Robert Wojcieszak, Franck Dumeignil, Rabah Boukherroub, Sabine Szunerits

Noble metal nanostructures are exceptional light absorbing systems, in which electron–hole pairs can be formed and used as “hot” charge carriers for catalytic applications. The main goal of the emerging field of plasmon-induced catalysis is to design a novel way of finely tuning the activity and…

Materials, 2019, Materials, 12 (1), pp.43. ⟨10.3390/ma12010043⟩. ⟨hal-02309136⟩

Article dans une revue

Electromagnetic physical modeling of a gallium nitride distributed transferred electron device based planar waveguide structure THz oscillator

Christophe Dalle

The potential of a planar waveguide structure terahertz oscillator based on a gallium nitride distributed transferred electron device is theoretically investigated. The circuit numerical physical modeling relies on a two-dimensional time-domain electromagnetism/transport simulator. It is based on…

Advanced Electromagnetics, 2019, 8 (4), pp.89-102. ⟨10.7716/aem.v8i4.1214⟩. ⟨hal-02395343⟩

Article dans une revue

Synthesis of T-Nb2O5 thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices

Saliha Ouendi, Cassandra Arico, Florent Blanchard, Jean-Louis Codron, Xavier Wallart, Pierre-Louis Taberna, Pascal Roussel, Laurent Clavier, Patrice Simon, Christophe Lethien

Atomic Layer Deposition has been used to grow 30 to 90 nm-thick amorphous Nb2O5 films onto Pt current collectors deposited on Si wafer. While T-Nb2O5 polymorph is obtained by further annealing at 750 °C, the…

Energy Storage Materials, 2019, 16, pp.581-588. ⟨10.1016/j.ensm.2018.08.022⟩. ⟨hal-02135683⟩

Article dans une revue

Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

M. Rzin, B. Guillet, Laurence Méchin, P. Gamarra, C. Lacam, F Medjdoub, J.-M. Routoure

This article reports on sub-10-nm quater-nary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultra-short gate length of 200 nm. Two batches of HEMTs with two SiN thicknesses (t SiN) of 14…

IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02382779⟩

Article dans une revue

Y-shaped magnonic demultiplexer using induced transparency resonances

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We give an analytical demonstration of the possibility to realize a simple magnonic demultiplexer based on induced transparency resonances. The demultiplexer consists on an Y-shaped waveguide with an input line and two output lines. Each line contains two grafted stubs at a given position far from…

AIP Advances, 2019, 9 (3), pp.035011. ⟨10.1063/1.5080350⟩. ⟨hal-03143601⟩

Article dans une revue

Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs

Wafa Bellil, Abdelkader Aissat, Jean-Pierre Vilcot

In this work we study and optimize the single solar cell efficiency of GaNxAs1-x-ySby and Ga1-xInxNyAs1-y deposed on GaAs. The solar cells are simulated, in the aim to find the best concentration of nitrogen and antimony for GaNxAs1-x-ySby, and indium and nitrogen for Ga1-xInxNyAs1-y which gives us…

Procedia Computer Science, 2019, Procedia Computer Science, 151, pp.1028-1033. ⟨10.1016/j.procs.2019.04.145⟩. ⟨hal-02409552⟩

Article dans une revue

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, Christophe Gaquière, Hassen Maaref

AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to…

Silicon, 2019, 11 (1), pp.557-562. ⟨10.1007/s12633-018-9767-6⟩. ⟨hal-03148960⟩