Publications

• Article dans une revue

Spectroscopic diagnostics and modelling of a N-2-Ar mixture discharge created by an RF helical coupling device: I. Kinetics of N-2(B (3)Pi(g)) and N-2(C (3)Pi(u)) states

Foissac C, Kristof J, Annusova A, Veis P, Supiot P

Plasma Sources Sci. Technol., 2012, 21, ⟨10.1088/0963-0252/21/5/055021⟩. ⟨hal-03090542⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of a N-2-Ar mixture discharge created by an RF helical coupling device: II. Vibrational distribution of the N-2(C (3)Pi(u), nu '') state

Annusova A, Foissac C, Kristof J, Veis P, Supiot P

Plasma Sources Sci. Technol., 2012, 21, ⟨10.1088/0963-0252/21/5/055022⟩. ⟨hal-03090546⟩

• Article dans une revue

Phonons in Slow Motion: Dispersion Relations in Ultra-Thin Si Membranes

John Cuffe, Emigdio Chavez, Andrey Shchepetov, Pierre-Olivier Chapuis, El Houssaine El Boudouti, Francesc Alzina, Timothy Kehoe, Jordi Gomis-Bresco, Damian Dudek, Yan Pennec, Bahram Djafari-Rouhani, Mika Prunnila, Jouni Ahopelto, Clivia. M. Sotomayor Torres

We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as \sim 8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than one order of magnitude compared to bulk values. The…

Nano Letters, 2012, 12 (7), pp.3569-3573. ⟨10.1021/nl301204u⟩. ⟨hal-00732480⟩

• Communication dans un congrès

RF noise investigation in high-k/metal gate 28-nm CMOS transistors

Y. Tagro, L. Poulain, Sylvie Lepilliet, B. Dormieu, D. Gloria, P. Scheer, Gilles Dambrine, Francois Danneville

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259581⟩. ⟨hal-00801049⟩

• Communication dans un congrès

A 10GBits/s 2.1pJ/bit OOK demodulator at 60GHz for wireless chip-to-chip communication

S. Foulon, S. Pruvost, Christophe Loyez, N. Rolland, Vanessa Avramovic

IEEE Radio and Wireless Symposium, RWS 2012, 2012, Santa Clara, CA, United States. pp.291-294, ⟨10.1109/RWS.2012.6175320⟩. ⟨hal-00801068⟩

• Article dans une revue

Comment on ''Observation of anomalous acoustic phonon dispersion in SrTiO3 by broadband stimulated Brillouin scattering'' [Appl. Phys. Lett. 98, 211907 (2011)]

Arnaud Devos, Y.C. Wen, P.A. Mante, C.K. Sun

Applied Physics Letters, 2012, 100, pp.206101-1. ⟨10.1063/1.4717244⟩. ⟨hal-00787469⟩

• Communication dans un congrès

Conception and fabrication of piezo-resistive ring shaped AFM probe

Z. Xiong, B. Walter, E. Mairiaux, M. Faucher, L. Buchaillot, Bernard Legrand

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.547-550, ⟨10.1109/MEMSYS.2012.6170180⟩. ⟨hal-00801106⟩

• Communication dans un congrès

Electrical nerve agents sensors based on chemically functionalized nanomaterials

A. Carella, S. Clavaguera, C. Celle, S. Lenfant, D. Vuillaume, Emmanuel Dubois, V. Passi, L. Gorintin, P. Bondavalli, J.P. Simonato

NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, 2012, Santa Clara, CA, United States. pp.130-132. ⟨hal-00801097⟩

• Communication dans un congrès

Integrative technology-based approach of microelectromechanical systems (MEMS) for biosensing applications

Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt

34th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2012, 2012, San Diego, CA, United States. pp.4475-4478, ⟨10.1109/EMBC.2012.6346960⟩. ⟨hal-00802629⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage…

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩