Publications

• Communication dans un congrès

Fabrication, characterization and analysis of AlN thin films grown on HR-silicon by MBE and PVD methods

N. Defrance, Marie Lesecq, F. Lecourt, Virginie Hoel, Jean-Claude de Jaeger

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801190⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Proceedings/Recueil des communications

Historical Reflections on the Scale Ratio in the Galilean Trattato di Fortificazione

Raffaele Pisano, Danilo Capecchi

Proceedings of Explorations in the History of Machines and Mechanisms, 15, Springer Netherlands, pp.463-473, 2012, History of Mechanism and Machine Science, 978-94-007-4132-4. ⟨10.1007/978-94-007-4132-4_32⟩. ⟨hal-04513887⟩

• Communication dans un congrès

Microstrip EBG structures for millimeter-wave range with a broadband coplanar waveguide to microstrip transition

Magdalena Chudzik, Abbas Ghaddar, Israel Arnedo, Aintzane Lujambio, Ivan Arregui, Fernando Teberio, Miguel A. G. Laso, Txema Lopetegi, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820993⟩

• Communication dans un congrès

Intelligent transports systems based on UWB technologies

Fouzia Boukour, Atika Rivenq

Ultra Wide Band (UWB) may offer very efficient solutions for various communication and localisation transport applications. We propose to use this technique to establish communication vehicle- to- vehicle and vehicle- to-infrastructure. In fact, compared to traditional carrier-based, Ultra-Wide…

IEEE European Wireless Conference, Sep 2012, Poland. 5p. ⟨hal-01068408⟩

• Communication dans un congrès

Throughput maximization approach for O-MIMO systems using MGDM technique

M. Awad, W. Hamouda, Iyad Dayoub

IEEE Global Communications Conference, GLOBECOM 2012, 2012, Anaheim, CA, United States. pp.2953-2958, ⟨10.1109/GLOCOM.2012.6503566⟩. ⟨hal-00820960⟩

• Communication dans un congrès

A direct conversion IQ modulator in CMOS 65 nm SOI for multi-gigabit 60 GHz systems

Christophe Loyez, A. Siligaris, P. Vincent, A. Cathelin, N. Rolland

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.5-7. ⟨hal-00814970⟩

• Communication dans un congrès

Millimeter-wave broadband positioning system for indoor applications

Michael Bocquet, Christophe Loyez, M. Fryziel, N. Rolland

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258333⟩. ⟨hal-00802532⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is…

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩