Publications

• Article dans une revue

Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering

S. Rahmane, B. Abdallah, A. Soussou, E. Gautron, Pierre-Yves Jouan, L. Le Brizoual, Nicolas Barreau, A. Soltani, M. A. Djouadi

Physica Status Solidi A (applications and materials science), 2010, 207, pp.1604-1608. ⟨10.1002/pssa.200983776⟩. ⟨hal-00549911⟩

• Communication dans un congrès

AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications

S. Bouzid, Virginie Hoel, N. Defrance, H. Maher, F. Lecourt, M. Renvoise, D. Smith, Jean-Claude de Jaeger

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩. ⟨hal-00549981⟩

• Communication dans un congrès

An UWB millimeter-wave transceiver architecture for wireless sensor networks applications

L. Jin, Christophe Loyez, N. Rolland, P.A. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.377-380. ⟨hal-00549932⟩

• Communication dans un congrès

Baseband Fading Channel Simulator for Inter-Vehicle Communication using SystemC-AMS

Abdelbasset Massouri, Antoine Lévêque, Laurent Clavier, Michel Vasilevski, Andreas Kaiser, Marie-Minerve Louerat

System level modeling and simulation have become a key issue in analyzing, optimizing and designing wireless systems. In this paper, modeling RF front end devices and radio propaga- tion channel especially fading time-variant channel for Inter- Vehicle Communication using SystemC-AMS are…

2010 IEEE International Behavioral Modeling and Simulation Conference (BMAS 2010), Sep 2010, San Jose, CA, United States. pp.36-41. ⟨hal-00632156⟩

• Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Nina Diakonova, A. El Fatimy, Y. Meziani, T. Otsuji, Dominique Coquillat, Wojciech Knap, Frederic Teppe, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M. A. Poisson, S. Delage

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

35th International Conference on Infrared, Millimeter and Terahertz Waves, Sep 2010, Rome, Italy. pp.1. ⟨hal-00636136⟩

• Communication dans un congrès

SubfemtoFarad MOS varactor characterization tools

R. Debroucke, J. Larchanche, D. Theron, D. Ducatteau, H. Tanbakuchi, Christophe Gaquière

40th European Microwave Conference, EuMC 2010, 2010, France. pp.783-786. ⟨hal-00550021⟩

• Article dans une revue

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

S.R. Plissard, Christophe Coinon, Ydir Androussi, X. Wallart

The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained…

Journal of Applied Physics, 2010, 107 (1), pp.0161021. ⟨10.1063/1.3275872⟩. ⟨hal-00548708⟩

• Article dans une revue

Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential

Evelyne Lampin, Catherine Priester, Christophe Krzeminski, Laurence Magaud

The atomistic structure of the graphene buffer layer on Si-terminated SiC is investigated using a modified version of the environment-dependent interatomic potential. The determination of the equilibrium state by the conjuguate gradients method suffers from a complex multiple-minima energy surface…

Journal of Applied Physics, 2010, 107 (10), pp.103514. ⟨10.1063/1.3357297⟩. ⟨hal-00549078⟩

• Article dans une revue

Adjustable supercontinuum laser source with low coherence length and low timing jitter

Marco Andreana, Anne Bertrand, Y. Hernandez, Philippe Leproux, Vincent Couderc, Stéphane Hilaire, Guillaume Huss, D. Giannone, Alessandro Tonello, Alexis Labruyère

This paper introduces a supercontinuum (SC) laser source emitting from 400 nm to beyond 1750 nm, with adjustable pulse repetition rate (from 250 kHz to 1 MHz) and duration (from ~200 ps to ~2 ns). This device makes use of an internally-modulated 1.06 μm semiconductor laser diode as pump source. The…

Proceedeing SPIE Europe, 2010, 7714, pp. 771404. ⟨10.1117/12.854237⟩. ⟨hal-00633563⟩

• Article dans une revue

Circularly polarized millimeter-wave antenna using 0-level packaging

E. Herth, N. Rolland, T. Lasri

IEEE Antennas and Wireless Propagation Letters, 2010, 9, pp.934-937. ⟨10.1109/LAWP.2010.2080310⟩. ⟨hal-00549483⟩