Publications

• Communication dans un congrès

Investigation of wavelength GalnNAs 1300-1550 nm strained quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, D. Berkani, Jean-Pierre Vilcot

1st WSEAS International Conference on Computational Chemistry, COMPUCHEM'07, Dec 2007, Cairo, Egypt. pp.115-119. ⟨hal-00362689⟩

• Article dans une revue

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material…

Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩

• Article dans une revue

CVD growth of carbon nanotubes at very low pressure of acetylene

Yu.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, Sophie Guéron, Mathias Kobylko, Mathieu Kociak, Helene Bouchiat, Vincent Agache, Anne-Sophie Rollier, Lionel Buchaillot, Anne Marie Bonnot, A.Yu. Kasumov

We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5 mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport…

Applied physics. A, Materials science & processing, 2007, 88, pp.687-691. ⟨10.1007/s00339-007-4028-3⟩. ⟨hal-00351737⟩

• Article dans une revue

Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges

J. Kuzmik, S. Bychikhin, R. Lossy, H.J. Würfl, M.A. Di Forte-Poisson, J.P. Teyssier, Christophe Gaquière, D. Pogany

Solid-State Electronics, 2007, 51, pp.969-974. ⟨10.1016/j.sse.2007.04.001⟩. ⟨hal-00283496⟩

• Article dans une revue

Templates for LaAlO3 epitaxy on silicon

Pierre Boulenc, Isabelle Devos

As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0…

Microelectronics Reliability, 2007, 47 (4-5), pp.709-713. ⟨10.1016/j.microrel.2007.02.010⟩. ⟨hal-00285661⟩

• Communication dans un congrès

Réalisation de grille nitrure de longueur inférieure à 100nm pour des applications haute fréquence de HEMTs AlGaN/GaN

S. Boulay, Virginie Hoel, S. Touati, E. Delos, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, S. Delage, Y. Cordier

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C1-1-4. ⟨hal-00370327⟩

• Communication dans un congrès

Metallic source/drain architecture : status and prospects

Emmanuel Dubois, G. Larrieu, N. Breil, M. Ostling, P.E. Hellström, N. Reckinger, Xing Tang, S. Mantl

SINANO-ESSDERC Workshop, 2007, Munich, Germany. ⟨hal-00367349⟩

• Communication dans un congrès

Anticollision radar study and development

J. Zaidouni, Atika Rivenq, Smail Niar

Proceedings of the 2007 Forum on specification & Design Languages, FDL'07, 2007, Barcelona, Spain. ⟨hal-00367711⟩

• Communication dans un congrès

Breaking the AlGaN/GaN HEMT scaling limit with AlInN barriers

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, Christophe Gaquière, E. Kohn

Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007, 2007, Venice, Italy. ⟨hal-00367695⟩

• Communication dans un congrès

Study and development of a compact low frequency acoustic sensor for vibratory analysis and characterisation of mechanical plates

Georges Nassar, B. Merheb, A. Skaf, Bertrand Nongaillard

Proceedings of the 2007 International Congress on Ultrasonics, ICU 2007, 2007, Vienna, Austria. ⟨hal-00367716⟩