Publications

• Communication dans un congrès

Contrôle des diagrammes de rayonnement par radômes métallo-diélectriques et métamatériaux

T. Akalin, J. Ciberta, R. Lalinde, O. Vanbésien, E. Estebe, D. Lippens

2003, pp.5D-4. ⟨hal-00146085⟩

• Communication dans un congrès

Optimisation and modelling of pentacene-based organic thin film on high-k gate dielectrics

K. Lmimouni, M. Berliocchi, C. Dufour, Denis Remiens, D. Vuillaume, G. Velu, C. Legrand

7th European Conference on Molecular Electronics, ECME 2003, 2003, Avignon, France. ⟨hal-00146178⟩

• Communication dans un congrès

Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies

Stéphane Lenfant, Dominique Vuillaume, Christophe Krzeminski, Guy Allan, Christophe Delerue, F. Tran Van, C. Chevrot

7th European Conference on Molecular Electronics, ECME 2003, Sep 2003, Avignon, France. ⟨hal-00146179⟩

• Article dans une revue

Influence on the step covering on fatigue phenomenon for polycrystalline silicon MEMS

O. Millet, Bernard Legrand, D. Collard, L. Buchaillot

Japanese Journal of Applied Physics, 2003, 41, pp.L1339-L1341. ⟨hal-00146435⟩

• Communication dans un congrès

New Schottky source/drain architectures

Emmanuel Dubois

Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩

• Article dans une revue

Feedback of MEMS reliability study on the design stage : a step toward reliability aided design (RAD)

L. Buchaillot

Microelectronics Reliability, 2003, 43, pp.1919-1928. ⟨hal-00146437⟩

• Communication dans un congrès

2½ D microfabricated nib-like sources for nanoelectrospray applications

S. Le Gac, S. Arscott, C. Rolando

2003, pp.1211-1214. ⟨hal-00146442⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Communication dans un congrès

Raman characterization of Mg+ ion-implanted GaN

B. Boudart, Yannick Guhel, J. C. Pesant, Paul Dhamelincourt, M.A. Poisson

7th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2003, Lille, France. ⟨hal-01649531⟩