Publications
Affichage de 14841 à 14850 sur 16261
Influence des suspensions acoustiques transitoires sur la formation d'un champ de bulles de cavitation en mode découpé
S. Labouret, J. Frohly
2002, pp.759-762. ⟨hal-00149928⟩
Application of the DDFSE receiver to the EDGE standard
A. Mechai, Iyad Dayoub, Jean-Michel Rouvaen
2002, pp.709-712. ⟨hal-00149883⟩
Optimisation de la qualité de service en vidéocommunication numérique
François-Xavier Coudoux
2002. ⟨hal-00149880⟩
Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor
E. Lefebvre, M. Zaknoune, F. Mollot
14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩
Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates : influence of film thickness and orientation
T. Haccart, Eric Cattan, Denis Remiens
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.78-88. ⟨hal-00250395⟩
The linearisation of an electrostrictive device for MEMS applications
D. Jenkins, E. Fribourg-Blanc, Eric Cattan, Denis Remiens
13th IEEE International Symposium on Applications of Ferroelectrics, ISAF 2002, 2002, Japan. pp.479-482. ⟨hal-00250396⟩
Electrical and optical characterizations by prism-coupling method of PZT deposited in-situ by sputtering
El Hadj Dogheche, Denis Remiens, G. Velu
Vacuum, 2002, 66, pp.1-8. ⟨hal-00250392⟩
Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers
D. Vignaud, Y. Cordier, P. Miska, D. Ferré
28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542. ⟨hal-00250216⟩
La sismique réflexion haute résolution, un outil pour la reconnaissance des couches superficielles
Bogdan Piwakowski, C. Leonard, I. Shahrour
Revue française de Géotechnique, 2002, 101, pp.23-33. ⟨10.1051/geotech/2002101023⟩. ⟨hal-00250179⟩