Publications

Affichage de 1991 à 2000 sur 16428


  • Article dans une revue

High-field 1/f noise in hBN-encapsulated graphene transistors

A. Schmitt, D. Mele, Michael Rosticher, T. Taniguchi, K. Watanabe, C. Maestre, C. Journet, V. Garnier, Gwendal Fève, J. Berroir, Christophe Voisin, B. Plaçais, Emmanuel Baudin

Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility ”α-noise” by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance electronics. Early investigations in diffusive graphene have pointed out a…

Physical Review B, 2023, 107 (16), pp.L161104. ⟨10.1103/PhysRevB.107.L161104⟩. ⟨hal-04086406⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 12/2]

Raffaele Pisano

2023. ⟨hal-04510937⟩

  • Autre publication scientifique

Comité Stratégique de Filière et Groupe de Travail – EDEC-2

Sandrine Beaufils, Virginie Hoel

Conseil d’orientation du GIP-CNFM 2023, JPCNFM’2023, 29 novembre 2023, Toulouse, France, 2023. ⟨hal-04406418⟩

  • Article dans une revue

Fabrication, and direct current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude de Jaeger

Schottky contacts on fluorine implanted AlGaN/GaN heterostructures with the ideality factor close to unity and low on-voltage threshold are presented in this paper. An SF 6 plasma anode pretreatment followed by a specific low-temperature annealing is also compared to a nonannealed sample. In…

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, 41 (1), pp.012202. ⟨10.1116/6.0002125⟩. ⟨hal-03917965⟩