Publications

Affichage de 2681 à 2690 sur 16279


  • Communication dans un congrès

Band structure tuning at (La,Sr)MnO3 / (Ba,Sr)TiO3 interface

Jérôme Wolfman, Antoine Ruyter, B. Negulescu, Pascal Andreazza, Xavier Wallart, Sylvie Schamm-Chardon, Robin Cours, Teresa Hungria, Cecile Autret

Band structure engineering in silicon-based heterostructures dedicated to microelectronic and energy harvesting applications has been common material scientist playground for decades. Careful design of the energy level variation at hetero-interfaces is used e.g. to collect electron while preventing…

EMRS Spring 2022, May 2022, Virtual, France. ⟨hal-03750429⟩

  • Communication dans un congrès

100 Gbit/s THz Data Transmission and Beyond using Multicore Fiber Combined with UTC Photodiode Array

Alfred Bewindin Sawadogo, Aritrio Bandyopadhyay, Malek Zegaoui, Mohammed Zaknoune, P. Szriftgiser, Karen Baudelle, Monika Bouet, Géraud Bouwmans, Davy Gaillot, Esben Ravn Andresen, Guillaume Ducournau, Laurent Bigot

Photonics-driven transmitters are leading the race towards high data-rates at THz frequencies. Here, spatial-multiplexing based on multicore fiber and photodiodes array is considered to alleviate the limited output power. Sub-systems have been developed and validated.

2022 Optical Fiber Communications Conference and Exhibition (OFC 2022), Mar 2022, San Diego, CA, United States. pp.Th2A.26, ⟨10.1364/OFC.2022.Th2A.26⟩. ⟨hal-03668762⟩

  • Communication dans un congrès

Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V

Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub

We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal measurements up to a drain bias (VDS) as high as 70V for two different gate…

European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩

  • Article dans une revue

Wafer-level vapor cells filled with laser-actuated hermetic seals for integrated atomic devices

Vincent Maurice, Clément Carlé, Shervin Keshavarzi, Ravinder Kumar Chutani, Samuel Queste, Ludovic Gauthier-Manuel, Jean-Marc Cote, Rémy Vicarini, Moustafa Abdel Hafiz, Rodolphe Boudot, Nicolas Passilly

Atomic devices such as atomic clocks and optically-pumped magnetometers rely on the interrogation of atoms contained in a cell whose inner content has to meet high standards of purity and accuracy. Glass-blowing techniques and craftsmanship have evolved over many decades to achieve such standards…

Microsystems & Nanoengineering, 2022, 8 (129), pp.13. ⟨10.1038/s41378-022-00468-x⟩. ⟨hal-04224417⟩

  • Communication dans un congrès

Nanostructures wetting evaluation using ultra high frequency ultrasound

Abbas Salhab, Julien Carlier, Malika Toubal, Pierre Campistron, Marc Neyens, Bertrand Nongaillard, V. Thomy

Ultrasounds are a great tool for defects detection particularly for optically non-transparent materials. Hence, working at very high frequency (#GHz) allows the detection of nanoscale contact defects at the interface between two materials and especially in the presence of air, which has negligible…

SPIE OPTO conference 12002, Oxide-based Materials and Devices XIII, Jan 2022, San Francisco, United States. pp.58, ⟨10.1117/12.2620992⟩. ⟨hal-03620169⟩