Publications

Affichage de 3281 à 3290 sur 16278


  • Article dans une revue

SERS characterization of aggregated and isolated bacteria deposited on silver-based substrates

Cristina-Cassiana Andrei, Anne Moraillon, Eric Larquet, Monica Potara, Simion Astilean, Endre Jakab, Julie Bouckaert, Léa Rosselle, Nadia Skandrani, Rabah Boukherroub, Francois Ozanam, Sabine Szunerits, Anne Chantal Gouget-Laemmel

Surface-enhanced Raman scattering (SERS), based on the enhancement of the Raman signal of molecules positioned within a few nanometres from a structured metal surface, is ideally suited to provide bacterial-specific molecular fingerprints which can be used for analytical purposes. However, for some…

Analytical and Bioanalytical Chemistry, 2021, 413, pp.1417-1428. ⟨10.1007/s00216-020-03106-5⟩. ⟨hal-03044073⟩

  • Article dans une revue

High-Q silicon nitride drum resonators strongly coupled to gates

Xin Zhou, Srisaran Venkatachalam, Ronghua Zhou, Hao Xu, Alok Pokharel, Andrew Fefferman, Mohammed Zaknoune, Eddy Collin

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration…

Nano Letters, 2021, 21 (13), pp.5738-5744. ⟨10.1021/acs.nanolett.1c01477⟩. ⟨hal-03263144⟩

  • Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩

  • Communication dans un congrès

Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

Ousmane Magatte Kane, Luca Lucci, Pascal Scheiblin, Thierry Poiroux, Jean-Charles Barbé, Francois Danneville

Ultra-Thin-Body and Back-oxide Fully-Depleted Silicon-On-Insulator (UTBB-FDSOI) MOSFETs are the most recent and advanced Silicon-On-Insulator (SOI) architecture proposed to overcome the down-scaling limitations of traditional bulk devices. The UTBB-FDSOI architecture has already been proved very…

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 81-84, https://ieeexplore.ieee.org/abstract/document/9337333. ⟨hal-03462849⟩