Publications

Affichage de 5871 à 5880 sur 16428


  • Article dans une revue

International Summer School, Lille Report

Raffaele Pisano

Viewpoint, 2017, 110 (6), pp.13-14. ⟨hal-04509329⟩

  • Article dans une revue

Thermal conductivity of glassy GeTe4 by first-principles molecular dynamics

Assil Bouzid, Hayat Zaoui, Pier Luca Palla, Guido Ori, Mauro Boero, Carlo Massobrio, Fabrizio Cleri, Évelyne Martin

A transient thermal regime is achieved in glassy GeTe4 by first-principles molecular dynamics following the recently proposed “approach-to-equilibrium” methodology. The temporal and spatial evolution of the temperature do comply with the time-dependent solution of the heat equation. We demonstrate…

Physical Chemistry Chemical Physics, 2017, 19 (15), pp.9729-9732. ⟨10.1039/c7cp01063j⟩. ⟨hal-02349381⟩

  • Communication dans un congrès

Graphene field effect transistors with optimized contact resistance for current gain

W. Wei, D. D. Fazio, U. Sassi, A. C. Ferrari, E. Pallecchi, H. Happy

75th Annual Device Research Conference, DRC 2017, Jun 2017, South Bend, IN, USA, United States. pp.1-2, ⟨10.1109/DRC.2017.7999420⟩. ⟨hal-03335834⟩

  • Article dans une revue

Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

Steven Duffy, Brahim Benbakhti, Maghnia Mattalah, Wei Zhang, Meriem Bouchilaoun, Mohammed Boucherta, Karol Kalna, Nour Eddine Bourzgui, Maher, Hassan, Ali Soltani

An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer…

ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040 - S3043. ⟨10.1149/2.0111711jss⟩. ⟨hal-01914382⟩