Publications

Affichage de 7231 à 7240 sur 16428


  • Article dans une revue

Sub-THz characterisation of multi-walled carbon nanotube thin films using vector network analyser

S. Puthukodan, E. Dadrasnia, V.K.T. Vinod, H.K. Nguendon, H. Lamela, Guillaume Ducournau, Jean-Francois Lampin, F. Garet, J.L. Coutaz, D.M. Lee, S. Baik

A vector network analyser is used to study the electrical properties of multi-walled carbon nanotube (MWCNT) thin films deposited on a fused quartz substrate in the sub-terahertz (THz) frequency ranges of 220-325 GHz (WR3.4) and 325-500 GHz (WR2.2). The experiment is performed in free space. The…

Electronics Letters, 2014, 50, pp.297-299. ⟨10.1049/el.2013.4136⟩. ⟨hal-00954474⟩

  • Chapitre d'ouvrage

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic

Emmanuel Dubois, Aurelien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Yoann Tagro, Francois Danneville, J.F. Robillard, Christine Raynaud, Daniel Gloria, Jacek Ratajczak

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic'. Functional nanomaterials and devices for electronics, sensors and energy harvesting, 2014. ⟨hal-04249256⟩

  • Communication dans un congrès

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Corentin Durand, Pierre Capiod, Maxime Berthe, Tao Xu, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, B. Grandidier

In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of…

SPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩. ⟨hal-00974539⟩

  • Article dans une revue

RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor

Francois Danneville, Laurent Poulain, Yoann Tagro, Sylvie Lepilliet, Benjamin Dormieu, Daniel Gloria, P. Scheer, Gilles Dambrine

In order to pursue Moore's law, material engineering has constituted a real focus during the last decade. In particular, the recent introduction of new Gate stack using High-k dielectrics and Metal Gate (H-k/MG) for CMOS was a key point to downscale the 'Equivalent Oxide Thickness'.…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2014, 27, pp.736-747. ⟨10.1002/jnm.1972⟩. ⟨hal-01058062⟩