Publications

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Communication dans un congrès

Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes

Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, Christophe Krzeminski, L. Genovese, D. Rideau, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩

• Article dans une revue

Non-contact, automated surface wave measurements for the mechanical characterisation of concrete

O. Abraham, Bogdan Piwakowski, Géraldine Villain, Olivier Durand

This paper presents two automated devices for conducting non-contact ultrasonic measurements (with air coupling and laser interferometry) for the purpose of recovering mechanical properties (porosity) on a series of concrete slabs using surface waves. The devices employed herein as part of an…

Construction and Building Materials, 2012, 37, pp.904-915. ⟨10.1016/j.conbuildmat.2012.03.015⟩. ⟨hal-00790377⟩

• Article dans une revue

Description of the general outlines of the french project SENSO - Quality assessment and limits of different NDT methods

J.P. Balayssac, S. Laurens, Ginette Arliguie, D. Breysse, V. Garnier, X. Derobert, Bogdan Piwakowski

Construction and Building Materials, 2012, 35, pp.131-138. ⟨10.1016/j.conbuildmat.2012.03.003⟩. ⟨hal-00790359⟩

• Article dans une revue

Numerical and experimental investigation of kerf depth effect on high-frequency phased array transducer

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, S. Queste, Bertrand Nongaillard, Y.P. Huang

Background High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the structure design and fabrication of the kerfed ultrasonic array is quite challenging when very high frequency (⩾100 MHz) is…

Ultrasonics, 2012, 52, pp.223-229. ⟨10.1016/j.ultras.2011.08.006⟩. ⟨hal-00790373⟩

• Article dans une revue

THz surface plasmon modes on planar Goubau lines

Djamal Gacemi, Juliette Mangeney, Thibault Laurent, Jean-Francois Lampin, Tahsin Akalin, Karine Blary, Aloyse Degiron, Paul Crozat, Fanqi Meng

The dispersion relation and confinement of terahertz surface plasmon modes propagating along planar Goubau lines are studied using guided-wave time domain spectroscopy. We demonstrate the radial nature of the surface plasmon mode known as the Goubau mode and the transverse confinement of the…

Optics Express, 2012, 20 (8), pp.8466-8471. ⟨10.1364/OE.20.008466⟩. ⟨hal-00790374⟩

• Article dans une revue

Level repulsion and evanescent waves in sonic crystals

V. Romero-Garcia, Jerome O. Vasseur, Anne-Christine Hladky, Lluis Miquel Garcia-Raffi, J.V. Sanchez-Perez

This work theoretically and experimentally reports the evanescent connections between propagating bands in periodic acoustic materials. The complex band structures obtained by solving for the k(ω) problem reveal a complete interpretation of the propagation properties of these systems. The…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.212302-1-4. ⟨10.1103/PhysRevB.84.212302⟩. ⟨hal-00783380⟩

• Thèse

Contribution au développement de microcomposants pour la caractérisation ultrasonore en canal microfluidique sur silicium : modélisation de la propagation, Development of microcomponents for ultrasonic characterization in silicon based microchannel : propagation modeling

Assane Ndieguene

Les recherches menées pour le développement des microsystèmes ont permis d’améliorer considérablement la miniaturisation de certaines fonctions. Ces travaux, très multidisciplinaires, ont conduit à de nombreuses applications dans les domaines des télécommunications, de la chimie et de la biologie.…, The research activities for the development of microsystems enabled the downsizing of many functions. These multidisciplinary works concerns many applications in the fields of telecommunications, chemistry, and biology. In that context, our work concerned the conception and analyses of acoustical…

Micro et nanotechnologies/Microélectronique. Université de Valenciennes et du Hainaut-Cambrésis, 2011. Français. ⟨NNT : 2011VALE0033⟩. ⟨tel-03416217⟩

• Communication dans un congrès

The transverse electromagnetic horn antenna as an efficient THz pulse emitter

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Jens Klier, Sabine Wohnsiedler, Joachim Jonuscheit, René Beigang

We have fabricated a new photoconductive antenna based on a transverse electromagnetic horn and low temperature grown GaAs. It has been tested with a time-domain terahertz setup. The horn was used as the emitter and a standard dipole photoconductive antenna was used as the receiver. The spectrum…

International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

• Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is…

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩