Publications

Affichage de 9751 à 9760 sur 16279


  • Article dans une revue

Enhancement of biosensing performance in a droplet-based bioreactor by in situ microstreaming

O. Ducloux, E. Galopin, Farzam Zoueshtiagh, A. Merlen, V. Thomy

Biomicrofluidics, 2010, 4, pp.011102-1-5. ⟨10.1063/1.3310930⟩. ⟨hal-00549490⟩

  • Article dans une revue

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

  • Article dans une revue

Kinetics of RPECVD organosilicon polymer post-treatment in a N2/O2 microwave plasma remote afterglow

S. Abou Rich, V. Mille, Céline Vivien, S. Godey, P. Supiot

Plasma Processes and Polymers, 2010, 7, pp.775-784. ⟨10.1002/ppap.200900185⟩. ⟨hal-00549497⟩

  • Article dans une revue

Unusual Curie point independence of thickness and interfacial properties for perfectly (111)-oriented Ba0.6Sr0.4TiO3 thin films

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.2526-2529. ⟨10.1111/j.1551-2916.2010.03877.x⟩. ⟨hal-00549533⟩

  • Article dans une revue

Nanoscale study by piezoresponse force microscopy of relaxor 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 and 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 thin films grown on platinum and LaNiO3 electrodes

Mikaël Detalle, Anthony Ferri, Antonio Da Costa, Rachel Desfeux, Caroline Soyer, Denis Remiens

Thin Solid Films, 2010, 518, pp.4670-4674. ⟨10.1016/j.tsf.2009.12.056⟩. ⟨hal-00549914⟩

  • Communication dans un congrès

Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs

O. Fathallah, M. Gassoumi, S. Saadaoui, B. Grimbert, Christophe Gaquière, H. Maaref

27th International Conference on Microelectronics, MIEL 2010, 2010, pp.479-481, ⟨10.1109/MIEL.2010.5490440⟩. ⟨hal-00550032⟩

  • Communication dans un congrès

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Albert M.D. Noudeviwa, Yannick Roelens, Francois Danneville, Aurélien Olivier, Nicolas Wichmann, Nicolas Waldhoff, Sylvie Lepilliet, Gilles Dambrine, L. Desplanque, X. Wallart, Joseph Bellaiche, Derek Smith, Hassan Maher, S. Bollaert

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease…

5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289. ⟨hal-00549927⟩