Publications

• Communication dans un congrès

Inductive effects on crosstalk evaluation

Gregory Servel, Fabrice Huret, Erick Paleczny, Jean-François Legier, Denis Deschacht

Coupling noise between adjacent interconnect lines has become more significant in deep submicron technologies. From an electromagnetic analysis, this coupling noise is determined with respect to the different parameters and a comparison is made between distributed RC and RLC models to represent the…

ITC: Interconnect Technology Conference, Jun 2002, Burlingame, CA, United States. pp.63-65, ⟨10.1109/IITC.2001.930018⟩. ⟨hal-00152509⟩

• Article dans une revue

Thermally assisted formation of silicon islands on a silicon on insulator substrate

Bernard Legrand, Vincent Agache, Thierry Melin, Jean-Philippe Nys, Vincent Senez, Didier Stiévenard

We report the self-formation of nanometer-size silicon islands on a silicon-on-insulator (SOI) substrate that is associated with simple thermal treatment in the range of 500–900 °C. We study the island formation process versus the temperature of the thermal annealing, the thickness of the top…

Journal of Applied Physics, 2001, 91, pp.106-111. ⟨10.1063/1.1420761⟩. ⟨hal-00152464⟩

• Article dans une revue

PZT thin film bi-layer devices for phase controlled actuation in MEMS

D.F.L. Jenkins, W.W. Clegg, Eric Cattan, Denis Remiens

Journal of Electroceramics, 2001, 7, pp.5-11. ⟨hal-00152484⟩

• Communication dans un congrès

Filtre optique sur semiconducteur avec apodisation par échantillonnage de réseau de Bragg

S. Garidel, H. Eoukich, Sophie Maricot, A. Aboudou, Jean-Pierre Vilcot

Actes TELECOM 2001 & 2èmes Journées Franco-Maghrebines des Microondes et leurs Applications, JFMMA 2001, 2001, Casablanca, Maroc. ⟨hal-00152502⟩

• Article dans une revue

Luminescence polarization of silicon nanocrystals

Guy Allan, Christophe Delerue, Yann-Michel Niquet

We consider theoretically the polarization of the luminescence of Si nanocrystals that arises from the anisotropy of the optical moments. No-phonon and phonon-assisted optical transitions are calculated in tight binding and interpreted using effective-mass theory. In contrast to direct-gap…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 63, pp.205301/1-8. ⟨10.1103/PhysRevB.63.205301⟩. ⟨hal-00152554⟩

• Communication dans un congrès

Tight binding methods

Christophe Delerue, Guy Allan, Michel Lannoo

Tutorial Courses 'Interface atomic level and properties of advanced materials', 2001, San Feliu de Guixols, Spain. ⟨hal-00152575⟩

• Communication dans un congrès

HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range

D. Theron, Y. Cordier, X. Wallart, S. Bollaert, M. Zaknoune, B. Bonte, Christophe Gaquière, Michel Rousseau, F. Mollot, A. Cappy, R. Fauquembergue, Jean-Claude de Jaeger

2001, pp.53-56. ⟨hal-00152625⟩

• Communication dans un congrès

Evaluation de composants de la filière phosphure pour applications à 60 GHz

B. Bonte, M. Zaknoune, F. Mollot, X. Wallart, D. Theron

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. ⟨hal-00152676⟩

• Communication dans un congrès

Finite element modeling of smart materials : application to an adaptive structure using SMA

Anne-Christine Hladky, S. Rafanomezantsoa, L. Buchaillot, P. Bouchilloux

2001, pp.143-150. ⟨hal-00151692⟩

• Autre publication scientifique

Etude de dispositifs radiométriques pour la mesure de température : application aux domaines industriel et médical

V. Thomy

2001. ⟨hal-00152020⟩