Publications

• Communication dans un congrès

Intérêts de la technologie CMOS SOI pour les applications micro-ondes faible tension faible consommation

M. Dehan, B. Parvais, Gilles Dambrine, J.P. Raskin

3èmes Journées Francophones d'Etudes Faible Tension Faible Consommation, FTFC'2001, 2001, Bruxelles, Belgique. ⟨hal-00151782⟩

• Communication dans un congrès

Investigation of refractive index and optical propagation loss in gallium nitride based waveguides

El Hadj Dogheche, P. Ruterana, G. Nouet, F. Omnes, P. Gibart

4th International Conference on Nitride Semiconductors, 2001, United States. pp.429-432. ⟨hal-00250411⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q−3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight-binding techniques. The rectification current depends not only on…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, 8, pp.085405. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00018578⟩

• Communication dans un congrès

C16H33-Q-3CNQ, a molecular diode ?

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume

Electron Transport on the Molecular Scale, Feb 2001, Dresden, Germany. ⟨hal-00152155⟩

• Communication dans un congrès

Etude de gravure sèche en vue de réaliser un recess de grille de HEMTs sur GaN

Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. ⟨hal-00152672⟩

• Communication dans un congrès

Modélisation de HEMTs double puits pour l'intermodulation en bande Ka

Frédéric Bue-Erkmen, Christophe Gaquière, Pascal Delemotte, X. Hue, B. Boudart, Yves Crosnier

Actes des 12èmes Journées Nationales Microondes, JNM 2001, May 2001, Poitiers, France. ⟨hal-00152655⟩

• Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

Electronics Letters, 2001, 37, pp.1095-1096. ⟨hal-00152620⟩

• Communication dans un congrès

Control of low-temperature-grown GaAs for ultrafast switching applications

V. Ortiz, M. Stellmacher, X. Marcadet, S. Formont, D. Adam, J. Nagle, Jean-Francois Lampin, Antigoni Alexandrou

Ultrafast Phenomena in Semiconductors V, 2001, United States. pp.202-210. ⟨hal-00250406⟩

• Communication dans un congrès

Evidence of polariton stimulation in semiconductor microcavities

F. Boeuf, R. Andre, R. Romestain, S.L. Dang, Emmanuel Peronne, Jean-Francois Lampin, D. Hulin, Antigoni Alexandrou

International Workshop on Light-Matter Coupling in Nitrides, 2001, France. pp.29-33. ⟨hal-00250405⟩

• Article dans une revue

Influence of porosity on Young's modulus and Poisson's ratio in alumina ceramics

M. Asmani, Christine Kermel, Anne Leriche, Mohamed Ourak

This work presents a study on the influence of the porosity level on Young's modulus and Poisson's ratio of sintered alumina. A non-destructive technique using ultrasonic waves was used to determine the different parameters. Longitudinal and transverse wave velocities are measured by…

Journal of the European Ceramic Society, 2001, 21, pp.1081-1086. ⟨10.1016/S0955-2219(00)00314-9⟩. ⟨hal-00250427⟩