Publications

Affichage de 6001 à 6010 sur 16453


  • Communication dans un congrès

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Guillaume Croizier, Paolo Martins, M. Le Bailiff, Raphaël Aubry, S. Bansropun, M. Fryziel, Nathalie Rolland, Afshin Ziaei

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction.…

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2017, Kaohsiung, Taiwan. pp.1237-1240, ⟨10.1109/TRANSDUCERS.2017.7994279⟩. ⟨hal-03270114⟩

  • Communication dans un congrès

Wireless monitoring system for lightweight aircraft landing gear

Christophe Delebarre, Sébastien Grondel, Samuel Dupont, F Rouvarel, M Yoshida

Mass repartition onboard lightweight aircraft is a crucial problem as it may generate difficulties for the pilot during the landing phase. Being able for the pilot to land the plane properly is of course an important aspect for safety, but also for structure integrity. So the mass repartition…

18th International Conference on Research and Education in Mechatronics (REM 2017), Sep 2017, Wolfenbuettel, Germany. pp.1-6, ⟨10.1109/REM.2017.8075230⟩. ⟨hal-03549288⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩

  • Article dans une revue

A New Photomechanical Molecular Switch Based on a Linear π-Conjugated System

Stéphane Lenfant, Yannick Viero, Christophe Krzeminski, Dominique Vuillaume, Dora Demeter, I. L. Dobra, Maiténa Oçafrain, Philippe Blanchard, Jean Roncali, C. van Dick, Jérôme Cornil

We report the electron-transport properties of a new photoaddressable molecular switch. The switching process relies on a new concept based on linear π-conjugated dynamic systems, in which the geometry and, hence, the electronic properties of an oligothiophene chain can be reversibly modified by…

Journal of Physical Chemistry C, 2017, 121 (22), pp.12416-12425. ⟨10.1021/acs.jpcc.7b01240⟩. ⟨hal-02564470⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs…

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩