Publications
Affichage de 10201 à 10210 sur 16120
325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology
F. Gianesello, R. Pilard, Sylvie Lepilliet, N. Waldhoff, C. Durand, S. Boret, B. Martineau, Gilles Dambrine, D. Gloria, B. Rauber, C. Raynaud
40th European Microwave Conference, EuMC 2010, 2010, France. pp.57-60. ⟨hal-00549919⟩
Noise characterization of mmW Si devices using classical and in-situ experimental set up
N. Waldhoff, Y. Tagro, L. Poulain, D. Gloria, Francois Danneville, Gilles Dambrine
European Microwave Week Workshops and Short Courses, Silicon Characterization from MHz to THz, 2010, Paris, France. ⟨hal-00573559⟩
A millimeter-wave inflatable frequency-agile elastomeric antenna
S. Hage-Ali, Nicolas Tiercelin, P. Coquet, R. Sauleau, Vladimir Preobrazhensky, Philippe Pernod
IEEE Antennas and Wireless Propagation Letters, 2010, 9, pp.1131-1134. ⟨10.1109/LAWP.2010.2096405⟩. ⟨hal-00573159⟩
Perfectly (001)- and (111)-oriented (Ba,Sr)TiO3 thin films sputtered on Pt/TiOx/SiO2/Si without buffer layers
L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens
Journal of the American Ceramic Society, 2010, 93, pp.350-352. ⟨10.1111/j.1551-2916.2009.03427.x⟩. ⟨hal-00549519⟩
Quasi-monolithic heat flux microsensor based on porous silicon boxes
K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, D. Leclercq
Sensors and Actuators A: Physical , 2010, 164, pp.35-40. ⟨10.1016/j.sna.2010.09.015⟩. ⟨hal-00549493⟩
Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications
E. Herth, Bernard Legrand, L. Buchaillot, N. Rolland, T. Lasri
Microelectronics Reliability, 2010, 50, pp.1103-1106. ⟨10.1016/j.microrel.2010.04.011⟩. ⟨hal-00549491⟩
An efficient speech recognition system in adverse conditions using the nonparametric regression
A. Amrouche, M. Debyeche, Abdelmalik Taleb-Ahmed, Jean-Michel Rouvaen, M.C.E. Yagoub
Engineering Applications of Artificial Intelligence, 2010, 23, pp.85-94. ⟨10.1016/j.engappai.2009.09.006⟩. ⟨hal-00549462⟩
Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse
M. Gassoumi, O. Fathallah, Christophe Gaquière, H. Maaref
Physica B: Condensed Matter, 2010, 405, pp.2337-2339. ⟨10.1016/j.physb.2010.02.042⟩. ⟨hal-00549453⟩
Further studies on the lithium phosphorus oxynitride solid electrolyte
T. Pichonat, C. Lethien, Nicolas Tiercelin, S. Godey, E. Pichonat, P. Roussel, Marie Colmont, P.A. Rolland
Materials Chemistry and Physics, 2010, 123, pp.231 - 235. ⟨10.1016/j.matchemphys.2010.04.001⟩. ⟨hal-00514193⟩
LP MOCVD growth of InAlN/GaN HEMT heterostructure : comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications
M.A. Di Forte-Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, S. Delage
Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩. ⟨hal-00549909⟩