Publications

• Article dans une revue

Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x rays

M.I. Richard, V. Favre-Nicolin, G. Renaud, T.U. Schuelli, C. Priester, Z. Zhong, T.H. Metzger

Applied Physics Letters, 2009, 94, pp.013112-1-3. ⟨10.1063/1.3064157⟩. ⟨hal-00471926⟩

• Article dans une revue

First internal spacers' introduction in record high I-ON/I-OFF TiN/HfO2 gate multichannel MOSFET satisfying both high-performance and low standby power requirements

E. Bernard, T. Ernst, B. Guillaumot, N. Vulliet, T.C. Lim, O. Rozeau, Francois Danneville, P. Coronel, T. Skotnicki, S. Deleonibus, O. Faynot

IEEE Electron Device Letters, 2009, 30, pp.148-151. ⟨10.1109/LED.2008.2009008⟩. ⟨hal-00471806⟩

• Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

• Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

• Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

• Article dans une revue

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

• Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

• Article dans une revue

(6 x 2) Reconstruction of the Ag/Si(111) surface at 77 K (vol 603, pg 311, 2009) - Corrigendum

A. Urbieta, K. Schulte, B. Grandidier, D. Deresmes, S.C. Erwin, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2009, 603, pp.1079-1079. ⟨10.1016/j.susc.2009.02.002⟩. ⟨hal-00473064⟩

• Autre publication scientifique

Réalisation et caractérisation d'un laser DFB bi-mode pour applications radio sur fibre

Stéphane Ginestar

2009. ⟨hal-00572793⟩

• Autre publication scientifique

Contribution à la caractérisation et à la modélisation des canaux MIMO

Abdelmottaleb Nasr

2009. ⟨hal-00573106⟩