Publications
Affichage de 12041 à 12050 sur 16551
Study of the fundamental Lamb modes interaction with symmetrical notches
Farouk Benmeddour, Sébastien Grondel, Jamal Assaad, Emmanuel Moulin
NDT & E International, 2008, 41, pp.1-9. ⟨10.1016/j.ndteint.2007.07.001⟩. ⟨hal-00360324⟩
Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
M. Mattalah, A. Telia, A. Soltani, Jean-Claude de Jaeger, P. Thevenin, A. Bath, B. Akkal, H. Abid
Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩. ⟨hal-00357796⟩
Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors
H. Marinchio, J. Torres, G. Sabatini, P. Nouvel, C. Palermo, Laurent Chusseau, L. Varani, F. Teppe, P. Shiktorov, E. Starikov, V. Gruzinskis, A. Shchepetov, S. Bollaert, Yannick Roelens
Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (1), pp.257-260. ⟨10.1002/pssc.200776572⟩. ⟨hal-00327410⟩
Molecular dynamics simulation of the recrystallization of disordered Si layers
E. Lampin, Christophe Krzeminski
Workshop SiMaDes-II, Atomic scale simulations and experimental studies of disordered systems, 2008, Grenoble, France. ⟨hal-00361542⟩
Comparative Sb and As segregation at the InP on GaAsSb interface
X. Wallart, S. Godey, Y. Douvry, L. Desplanque
Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩
Molecular-scale electronics
D. Vuillaume
Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩
Passive photonic components using InP optical wire technology
Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot, Maxime Beaugeois
IET Optoelectronics, 2008, 2, pp.69-75. ⟨10.1049/iet-opt:20060104⟩. ⟨hal-00357302⟩
Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics
A.K. Chauhan, D.K. Aswal, S.P. Koiry, S.K. Gupta, J.V. Yakhmi, C. Sürgers, David Guérin, S. Lenfant, D. Vuillaume
Applied physics. A, Materials science & processing, 2008, 90, pp.581-589. ⟨10.1007/s00339-007-4336-7⟩. ⟨hal-00357287⟩
Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire
T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩