Publications

• Article dans une revue

SOI-based nanoelectrospray emitter tips for mass spectrometry: a coupled MEMS and microfluidic design

Bernard Legrand, Alison Ashcroft, Lionel Buchaillot, S. Arscott

Journal of Micromechanics and Microengineering, 2007, 17 (3), pp.509-514. ⟨10.1088/0960-1317/17/3/013⟩. ⟨hal-02347438⟩

• Communication dans un congrès

Combining Internal Probing with Artificial Neural Networks for Optimal RFIC Testing

S. Ellouz, P. Gamand, C. Kelma, B. Vandewiele, Bruno Allard

In order to reduce production costs of RF devices, it is important to remove bad circuits very early in the production flow. It is all the more true for dies designed to be integrated in complex systems. Thus highly efficient RF wafer testing is mandatory for those applications to prevent the loss…

ITC '06, Oct 2006, Santa Clara, CA, United States. pp.1 - 9, ⟨10.1109/TEST.2006.297705⟩. ⟨hal-00369455⟩

• Article dans une revue

Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

M. Azize, Z. Bougrioua, P. Gibart

AlGaN/GaN high-electron mobility transistors (HEMTs) structures regrown by metalorganic vapour phase epitaxy (MOVPE) on semi-insulating (SI) GaN templates, after exposure to air, results in the presence of parasitic conducting channels at regrowth interface. Air contamination of the SI GaN…

Journal of Crystal Growth, 2007, 299 (1), pp.103-108. ⟨10.1016/j.jcrysgro.2006.10.250⟩. ⟨hal-02906690⟩

• Article dans une revue

Low-Operating-Voltage Organic Transistors Made of Bifunctional Self-Assembled Monolayers

M. Mottaghi, P. Lang, F. Rodriguez, Anna Rumyantseva, Abderrahim Yassar, G. Horowitz, S. Lenfant, D. Tondelier, D. Vuillaume

Self-assembled monolayers (SAMs) are molecular assemblies that spontaneously form on an appropriate substrate dipped into a solution of an active surfactant in an organic solvent. Organic field-effect transistors are described, built on an SAM made of bifunctional molecules comprising a short alkyl…

Advanced Functional Materials, 2007, 17 (4), pp.597-604. ⟨10.1002/adfm.200600179⟩. ⟨hal-00826656⟩

• Article dans une revue

Critical temperatures of 70%Pb(Mg1∕3Nb2∕3)O3–30%PbTiO3 thin films investigated by dielectric, ferroelectric, and structural measurements

X.J. Meng, Denis Remiens, Mickael Detalle, B. Dkhil, Jl. Sun, Jh. Chu

The authors have investigated the temperature dependence of the ferroelectric, dielectric, and structural properties of 70%Pb(Mg1∕3Nb2∕3)O3–30%PbTiO3 thin films. Two critical temperatures were evidenced. The first one occurring around 410K corresponds to the bulk paraelectric-ferroelectric phase…

Applied Physics Letters, 2007, 90 (13), pp.132904. ⟨10.1063/1.2716312⟩. ⟨hal-00176457⟩

• Article dans une revue

Integrated terahertz TEM horn antenna

Emilien Peytavit, Jean-Francois Lampin, Tahsin Akalin, L. Desplanque

A terahertz transverse electromagnetic horn antenna (THz-TEMHA) monolithically integrated on a gallium arsenide substrate has been studied by means of subpicosecond pulses generated and measured on a 50 Ω coplanar waveguide. The measured reflection coefficient is below −10 dB from 100 GHz to about…

Electronics Letters, 2007, 43 (2), pp.73-75. ⟨10.1049/el:20073679⟩. ⟨hal-00255785⟩

• Article dans une revue

Characteristics of Al2O3/AllnN/GaN MOSHEMT

F Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M.A. Di Forte-Poisson, M. Knez, E. Delos, Christophe Gaquière, S.L. Delage, E. Kohn

Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩. ⟨hal-00283495⟩

• Article dans une revue

A blind modulation type detector for DPRS standard

Iyad Dayoub, A. Okassa-M'Foubat, R. Mvone, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 41, pp.225-241. ⟨10.1007/s11277-006-9140-8⟩. ⟨hal-00283515⟩

• Article dans une revue

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Francois Vaurette, J.P. Nys, B. Grandidier, C. Priester, D. Stiévenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.235435-1-6. ⟨10.1103/PhysRevB.75.235435⟩. ⟨hal-00283122⟩

• Article dans une revue

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Malek Zegaoui, Joseph Harari, Nargess Choueib, V. Magnin, Didier Decoster

The ability of HSQ resist films to planarise active deep etched (1.5-2m) InP based structures with electrodes is demonstrated for the first time. Vertically etched III-V semiconductor devices require planarisation of the passivation material for metal interconnections and device integration. A new…

Electronics Letters, 2007, 43 (22), pp.1234-1236. ⟨10.1049/el:20071889⟩. ⟨hal-00283081⟩