Publications
Affichage de 14201 à 14210 sur 16125
Relationship between porosity, permeability and ultrasonic parameters in sound and damaged mortar
M. Goueygou, Z. Lafhaj, M. Kaczmarek
International Symposium on Non Destructive Testing in Civil Engineering, NDT-CE 2003, 2003, Germany. pp.1-9. ⟨hal-00250178⟩
M-line spectroscopy for optical analysis of thick LiNbO3 layers grown on sapphire substrates by radio-frequency multistep sputtering
El Hadj Dogheche, X. Lansiaux, Denis Remiens
Journal of Applied Physics, 2003, 93 (2), pp.1165-1168. ⟨10.1063/1.1530367⟩. ⟨hal-00146473⟩
Mechanical analysis of interconnect structures using process simulation
V. Senez, T. Hoffmann, P. Le Duc, F. Murray
Journal of Applied Physics, 2003, 93, pp.6039-6049. ⟨hal-00146398⟩
Metamorphic InAIAs/InGaAs HEMTs : material properties and device performance
Y. Cordier, S. Bollaert, M. Zaknoune, J.M. Chauveau, A. Cappy
CAI W.Z. III-V semiconductor heterostructures : physics and devices, Research Signpost, Kerala, India, pp.111-138, 2003. ⟨hal-00132383⟩
Numerical analysis of the process induced stresses in silicon microstructures
V. Senez, T. Hoffmann, A. Armigliato, I. de Wolf
2003, pp.350-361. ⟨hal-00146444⟩
Low frequency drain noise comparison of AlGaN/GaN HEMTs grown on silicon, SiC and sapphire substrates
A. Curutchet, N. Malbert, N. Touboul, Christophe Gaquière, A. Minko, M. Uren
Microelectronics Reliability, 2003, 43, pp.1713-1718. ⟨hal-00146665⟩
Détermination des paramètres limitant la montée des MOSFETs sub-100nm
M. Vanmackelberg, Sylvie Lepilliet, C. Raynaud, M. Dehan, Gilles Dambrine
2003, pp.1D-5. ⟨hal-00145999⟩
Réalisation d'un banc de mesure d'intermodulation biton en bande Ka : application à l'analyse des causes technologiques de non-linéarité des HEMTs de puissance
Frédéric Bue-Erkmen
2003. ⟨hal-00146643⟩
Study and realisation of a micromechanical relay for use in harsh environment
F. Conseil, P. Derderian, M.F. Ravat, D. Collard, L. Buchaillot
2003, pp.108-112. ⟨hal-00146461⟩
60-GHz high power performance In0.32 Al0.68 As-In0.33 Ga 0.67 As metamorphic HEMTs on GaAs
M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, Didier Theron
IEEE Electron Device Letters, 2003, 24, pp.724-726. ⟨hal-00146648⟩