Publications

• Communication dans un congrès

Inspection de billes par spectroscopie de résonance des ondes ultrasonores de surface

S. Petit, J. Gualandri, H. Carrerot, C. Bruneel

2002, pp.360-363. ⟨hal-00149922⟩

• Article dans une revue

Development of a new ultrasonic technique for bone and biomaterials in vitro caracterization

Fabrice Lefebvre, Y. Deblock, Pierre Campistron, D.D. Ahite, Jean-Jacques Fabre

Journal of Biomedical Materials Research, 2002, 63, pp.441-446. ⟨hal-00149908⟩

• Communication dans un congrès

Plastic relaxation mechanisms in systems with a twist-bonded layer

C. Priester, G. Grenet

2002, pp.I13.4. ⟨hal-00149952⟩

• Article dans une revue

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murtagh, J.C. Greer, M. Barbe, F. Bailly, Jacques Chevallier, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Constant

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨hal-00149640⟩

• Communication dans un congrès

Design of clamped-clamped beam resonator in thick-film epitaxial polysilicon technology

D. Galayko, A. Kaiser, Bernard Legrand, L. Buchaillot, C. Combi, D. Collard

2002, pp.447-450. ⟨hal-00148736⟩

• Communication dans un congrès

Transport électronique dans les systèmes organiques auto-assemblés sur des surfaces solides : applications en électronique moléculaire

D. Vuillaume

8èmes Journées de la Matière Condensée, JMC8, 2002, Marseille, France. ⟨hal-00148727⟩

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high…

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

• Communication dans un congrès

32-QAM radio transmission over multimode fibre beyond the fiber bandwidth

D. Wake, Samuel Dupont, Jean-Pierre Vilcot, A.J. Seeds

2002, 4 pp. ⟨hal-00149639⟩

• Article dans une revue

Low Schottky barrier source/drain for advanced MOS architecture : device design and material consideration

Emmanuel Dubois, G. Larrieu

An alternative MOSFET architecture based on the use of low barrier Schottky source/drain (S/D) contacts coupled to a thin silicon-on-insulator (SOI) film is described. Two-dimensional device simulations are used to demonstrate the advantage of low Schottky barrier S/D over conventional implanted…

Solid-State Electronics, 2002, 46 (7), pp.997-1004. ⟨10.1016/S0038-1101(02)00033-3⟩. ⟨hal-00148735⟩