Publications

Affichage de 3911 à 3920 sur 16273


  • Article dans une revue

Vertical breakdown of GaN on Si due to V-pits

S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. Freitas, J. Derluyn, F Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Journal of Applied Physics, 2020, 127 (1), pp.015701. ⟨10.1063/1.5129248⟩. ⟨hal-02429980⟩

  • Article dans une revue

Historical and Foundational Details on the Method of Infinite Descent: Every Prime Number of the Form 4n + 1 is the Sum of Two Squares

Paolo Bussotti, Raffaele Pisano

Foundations of Science, 2020, 25 (3), pp.671-702. ⟨10.1007/s10699-019-09642-3⟩. ⟨hal-04507520⟩

  • Communication dans un congrès

Power Domain NOMA Without SIC in Downlink CSS-Based LoRa Networks

Angesom Ataklity Tesfay, Eric Pierre Simon, Ido Nevat, Laurent Clavier

Low Power Wide Area Network, such as LoRa is one of the main building blocks of the Internet of Things. One of the main issues is to scale up the number of devices and one strong limitation comes from the downlink communication. In fact, the access point is constrained by the duty cycle, therefore…

23rd International Conference Distributed Computer and Communication Networks, DCCN 2020, Sep 2020, Moscow, Russia. pp.3-13, ⟨10.1007/978-3-030-66471-8_1⟩. ⟨hal-03219995⟩

  • Article dans une revue

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, Gilles Dambrine, Magali de Matos, Thomas Zimmer, Sébastien Frégonèse

This article presents the small-signal and noise characterization of different technologies based on chemical vapor deposition (CVD) and silicon-carbide (SiC) graphene field-effect transistors (GFETs). The noise model, built on noise figure measurements under 50 Ω using the F 50 method, was…

IEEE Transactions on Microwave Theory and Techniques, 2020, 68 (6), pp.2116-2123. ⟨10.1109/TMTT.2020.2982396⟩. ⟨hal-02540064⟩