Publications

Affichage de 4121 à 4130 sur 16446


  • Communication dans un congrès

Serial interference cancellation for improving uplink in LoRa-like networks

Angesom Ataklity Tesfay, Eric Pierre Simon, Guillaume Ferré, Laurent Clavier

In this paper, we present a new receiver design, which significantly improves performance in the Internet of Things networks such as LoRa, i.e., having a chirp spread spectrum modulation. The proposed receiver is able to demodulate multiple users simultaneously transmitted over the same frequency…

31st Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications (IEEE PIMRC), Aug 2020, London, United Kingdom. 6 p. ⟨hal-03270084⟩

  • Communication dans un congrès

Effects of the electrical limit conditions on the electromechanical behavior of piezoelectric transducer arrays

Abdelmajid Bybi, Adil Ammar, Mohammed Garoum, Sébastien Grondel, Ahmed Mzerd, Anne-Christine Hladky

Crosstalk is an undesirable phenomenon having a negative impact on the electroacoustic performance of ultrasonic transducer arrays, utilized in medical imaging and NDT applications. Indeed, when one element of a transducer array is excited, it generates parasitic voltages and/or displacement fields…

4th International Conference on Electrical and Information Technologies, ICEIT 2020, Mar 2020, Rabat, Morocco. pp.1-6, ⟨10.1109/ICEIT48248.2020.9113231⟩. ⟨hal-03209107⟩

  • Article dans une revue

Ферромагнетизм в гетероструктуре ферромагнитная пленка железо-иттриевого граната/ферромагнитный интерметаллид

Т.А. Shaikhulov, T. A, G. A. Ovsyannikov, K. Y. Constantinian, А.А. Klimov, V.V. В Demidov, K. L. Stankevich, Nicolas Tiercelin, Philippe Pernod, S.А. Nikitov

Fizika Tverdogo Tela, 2020, 62 (9), pp.1488. ⟨10.21883/FTT.2020.09.49774.08H⟩. ⟨hal-02963628⟩

  • Communication dans un congrès

Short-term reliability of high performance Q-band AlN/GaN HEMTs

R. Kabouche, K. Harrouche, Etienne Okada, F Medjdoub

We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performances in the millimeter wave range. It is found that the barrier thickness in this highly strain heterostructure…

IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩. ⟨hal-03044147⟩