Publications

• Communication dans un congrès

A Study of LoRa Low Power and Wide Area Network Technology

Umber Noreen, Ahcène Bounceur, Laurent Clavier

3rd IEEE International Conference on Advanced Technologies for Signal and Image Processing (ATSIP'2017), May 2017, Fez, Morocco. ⟨hal-01516485⟩

• Communication dans un congrès

Caractérisation thermique de matériaux biosourcés et biodégradables par la methode 3-omega

Ghizlane Boussatour, P.-Y. Cresson, B. Genestie, N. Joly, T. Lasri

XIIIème Colloque Interuniversitaire Franco-Québécois sur la Thermique des Systèmes, May 2017, Saint-Lô., France. ⟨hal-04541851⟩

• Communication dans un congrès

Low RF losses up to 110 GHz in GaN-on-silicon HEMTs

R Pecheux, Riad Kabouche, Ezgi Dogmus, A Linge, Malek Zegaoui, F Medjdoub

We report on low RF losses at the interface between the epitaxial structure and the silicon substrate (less than 0.8 dB/mm up to 110GHz) of AlN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. This stateof-the-art performance makes GaN-on-Silicon HEMTs competitive with GaN…

Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE2017, May 2017, Las Palmas de Gran Canaria, Spain. ⟨hal-03298883⟩

• Communication dans un congrès

Spectrum sensing for wireless communications using energy ratio and beamforming

Kais Bouallegue, Iyad Dayoub, M Gharbi

In this paper, a new spectrum sensing (SS) method, called maximum-to-mean energy detector (MMED), is proposed. Considering a wireless communication system with many angles of arrival (AoA), the suggested method is based on beamforming and the ratio of the maximum energy to the mean one of the…

ICC 2017 - 2017 IEEE International Conference on Communications, May 2017, Paris, France. pp.1-6, ⟨10.1109/ICC.2017.7997142⟩. ⟨hal-02318303⟩

• Communication dans un congrès

Millimeter-wave high power GaN transistors: the race for better efficiency

F Medjdoub

Millimeter-wave high power GaN transistors: the race for better efficiency, May 2017, Turin, Italy. ⟨hal-03298881⟩

• Communication dans un congrès

Profiling and modelling of HEVC intra video encoder’s energy consumption for next generation WVSNS

Achraf Ait-Beni-Ifit, Othmane Alaoui-Fdili, Patrick Corlay, François-Xavier Coudoux, Driss Aboutajdine

5th International Conference on Networked Systems, NETYS 2017, May 2017, Marrakech, Morocco. ⟨hal-03579950⟩

• Communication dans un congrès

Colloidal semiconductor nanocrystal: from single objects to artificial solids

Christophe Delerue

General Scientific Meeting of the Belgian Physical Society, BPS Meeting 2017, May 2017, Mons, Belgium. ⟨hal-03317605⟩

• Communication dans un congrès

Métamatériaux absorbants PE-NiFe en bandes L et S

Younès Arbaoui, Vincent Laur, Didier Lippens, Maalouf Azar, Eric Lheurette, Nicolas Fernez, Patrick Queffelec

JNM 2017, May 2017, Saint Malo, France. ⟨hal-03047409⟩

• Communication dans un congrès

Premier Système de Mesure Petit Signaux Deux Ports Complètement Intégré en Bande G

Walid Aouimeur, José Moron Guerra, Ayssar Serhan, Sylvie Lepilliet, Thomas Quémerais, Daniel Gloria, Estelle Lauga-Larroze, Jean-Daniel Arnould, Christophe Gaquière

Journées Nationales Micro-ondes, May 2017, Saint Malo, France. ⟨hal-02020034⟩

• Communication dans un congrès

Caractérisation et modélisation non-linéaire du HEMT AlN/GaN sur substrat silicium et validation par mesure Load-Pull

Ahmad Al Hajjar, Julien Couvidat, Jean-Christophe Nallatamby, Raymond Quéré, F Medjdoub

– Cet article décrit la caractérisation et la modélisation grand-signal d'un transistor HEMT AlN/GaN sur substrat silicium de développement 2x50 µm avec une longueur de grille ultra courte du laboratoire IEMN de Lille. Ce composant a été optimisé pour la conception de circuits analogiques…

20èmes Journées Nationales Microondes, May 2017, Saint-Malo, France. ⟨hal-01661775⟩