Publications

Affichage de 9891 à 9900 sur 16300


  • Article dans une revue

AlGaN/GaN HEMT on (111) single crystalline diamond

M. Alomari, A. Dussaigne, D. Martin, N. Grandjean, Christophe Gaquière, E. Kohn

Electronics Letters, 2010, 46, pp.299-300. ⟨10.1049/el.2010.2937⟩. ⟨hal-00549443⟩

  • Article dans une revue

0-3 and 1-3 piezo-composites based on single crystal PMN-PT for transducer applications

F. Levassort, Anne-Christine Hladky, H. Le Khanh, L.P. Tran-Huu-Hue, M. Lethiecq, M. Pham Thi

Advances in Applied Ceramics, 2010, 109, pp.162-168. ⟨10.1179/174367509X12472364601075⟩. ⟨hal-00549550⟩

  • Article dans une revue

Metallographic and numerical studies of the role of catalyst particles of MgH2-Mg system

M. Celino, A. Montone, F. Cleri, A. Aurora, D. Mirabile-Gattia, S. Giusepponi, M. Vittori-Antisari

Defect and Diffusion Forum, 2010, 297-301, pp.263-268. ⟨10.4028/www.scientific.net/DDF.297-301.263⟩. ⟨hal-00549631⟩

  • Article dans une revue

High-speed 1.3-µm p-i-n GaNAsSb/GaAs waveguide photodetector

Malek Zegaoui, Z. Xu, N. Saadsaoud, Kianhuan Tan, Wan Khai Loke, Satrio Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device…

IEEE Electron Device Letters, 2010, 31 (7), pp.704-706. ⟨10.1109/LED.2010.2049563⟩. ⟨hal-00549006⟩

  • Article dans une revue

Structured light fringe projection setup using optimized acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, Michel Pommeray

IEEE/ASME Transactions on Mechatronics, 2010, 15, pp.557-560. ⟨10.1109/TMECH.2010.2052627⟩. ⟨hal-00549025⟩

  • Article dans une revue

Faceted sidewalls of silicon nanowires : Au-induced structural reconstructions and electronic properties

T. Xu, J.P. Nys, A. Addad, O.I. Lebedev, A. Urbieta, B. Salhi, Maxime Berthe, B. Grandidier, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.115403-1-10. ⟨10.1103/PhysRevB.81.115403⟩. ⟨hal-00549070⟩

  • Article dans une revue

Functional model of a nanoparticle-organic memory transistor for use as a spiking synapse

O. Bichler, W. Zhao, F. Alibart, S. Pleutin, D. Vuillaume, G. Gamrat

IEEE Transactions on Electron Devices, 2010, 57, pp.3115-3122. ⟨10.1109/TED.2010.2065951⟩. ⟨hal-00548966⟩

  • Article dans une revue

60 GHz current gain cut-off frequency graphene nanoribbon FET

N. Meng, F.J. Ferrer, D. Vignaud, Gilles Dambrine, H. Happy

International Journal of Microwave and Wireless Technologies, 2010, 2, pp.441-444. ⟨10.1017/S175907871000070X⟩. ⟨hal-00548564⟩

  • Article dans une revue

Oligothiophene-derivatized azobenzene as immobilized photoswitchable conjugated systems

S. Karpe, M. Oçafrain, K. Smaali, S. Lenfant, D. Vuillaume, P. Blanchard, J. Roncali

Chemical Communications, 2010, 46, pp.3657-3659. ⟨10.1039/c002072a⟩. ⟨hal-00548970⟩