Publications
Affichage de 7801 à 7810 sur 16548
Modelling of Silicon Oxynitridation by Nitrous Oxide using the Reaction Rate Approach, Modélisation de l'oxynitridation du silicium via l'oxyde nitreux par une méthode cinétique reactionnelle
Christophe Dominique Krzeminski
2013. ⟨hal-05690606⟩
[Invité] Interactions optomécaniques dans les cavités phoxoniques
Bahram Djafari-Rouhani, M. Oudich, Said El-Jallal, Yan Pennec
14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, 2013, Evian, France. ⟨hal-00819474⟩
Interactions optomécaniques dans les cavités phoxoniques
Said El-Jallal, Mourad Oudich, Yan Pennec, Bahram Djafari-Rouhani, Abdelkader Makhoute
16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957779⟩
Substrate mode-integrated SPR sensor
C. Lenaerts, Jean-Pierre Vilcot, J. Hastanin, B. Pinchemel, Sophie Maricot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, J. Hottin, C. Desfours, K. Fleury-Frenette
Plasmonics, 2013, 8, pp.1203-1208. ⟨10.1007/s11468-013-9533-y⟩. ⟨hal-00823963⟩
News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning
L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩
Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors
N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume
22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩
Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique
Floriane Leroy, Anthony Rousseau, Sandrine Payan, El Hadj Dogheche, David Jenkins, Didier Decoster, Mario Maglione
Optics Letters, 2013, 38 (7), pp.1037-1039. ⟨10.1364/OL.38.001037⟩. ⟨hal-00804978⟩
Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref
Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩
22 Gbps wireless communication system at 0.4 THz
Guillaume Ducournau, P. Szriftgiser, Fabio Pavanello, Philipp Latzel, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Denis Bacquet, Jean-Francois Lampin
38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩. ⟨hal-03286171⟩
Validation of experimental whole-body SAR assessment method in a complex indoor environment
Aliou Bamba, Wout Joseph, Guenter Vermeeren, Emmeric Tanghe, Davy Gaillot, Jørgen B. Andersen, Jesper Ødum Nielsen, M. Lienard, Luc Martens
Bioelectromagnetics, 2013, 34, pp.122-132. ⟨10.1002/bem.21749⟩. ⟨hal-00796439⟩