Publications
Affichage de 14521 à 14530 sur 16302
Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs
E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot
2003, pp.409-412. ⟨hal-00162725⟩
Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments
S. Shapoval, V. Gurtovoi, A. Kovalchuk, L. Eastman, A. Vertjachih, Christophe Gaquière, D. Theron
2003, pp.90-93. ⟨hal-00149939⟩
Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects
E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern
Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩
High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications
A. Wilk, S. Godey, P. Gerard, C. Chaix, F. Mollot
2003, pp.421-424. ⟨hal-00162724⟩
Strong effect of interband transitions in the picosecond ultrasonics response of metallic thin films
Arnaud Devos, A. Le Louarn
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.045405/1-6. ⟨10.1103/PhysRevB.68.045405⟩. ⟨hal-00144884⟩
An experimental and theoretical investigation of the GaInAs surface reactivity to phosphorus
X. Wallart, C. Priester
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.235314. ⟨hal-00018497⟩
ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements
D. Schreurs, J. Verspecht, E. Vandamme, N. Vellas, Christophe Gaquière, Marie Germain, G. Borghs
2003, pp.447-450. ⟨hal-00162739⟩
Conception d'un système de communication ultra large bande appliqué aux transports
F. El Bahhar
2003. ⟨hal-00162742⟩
Localisation d'usagers de la route en détresse par réseau de radiocommuncations cellulaire d'appel d'urgence dédié
M. Laoufi
2003. ⟨hal-00162745⟩