Publications

Affichage de 1881 à 1890 sur 16261


  • Communication dans un congrès

Light and Efficient Authentication Mechanism for Connected Vehicles Using Unsupervised Detection

Ramzi Boutahala, Hacène Fouchal, Marwane Ayaida, Shiwen Mao

IEEE International Conference on Communications (ICC), 2023, Rome, Italy. pp.329-333, ⟨10.1109/ICC45041.2023.10279812⟩. ⟨hal-04297399⟩

  • Communication dans un congrès

[Invited] Propagation of Elastic Waves in Randomly Distributed Pillars on Metamaterial Phononic Plate

Y. Pennec, L. Carpentier, R. Cai, Y. Jin, A. Noual, B. Djafari-Rouhani, T. Deletang, B. Bonello

PHONONICS 2023: 6th International Conference on Phononic Crystals/Metamaterials/Metasurfaces, Phonon Transport, and Topological Phononics, Jun 2023, Manchester (UK), United Kingdom. ⟨hal-04374333⟩

  • Article dans une revue

Highly stable fluorine-free slippery liquid infused surfaces

Anne-Sophie Vaillard, Manon Saget, Flavie Braud, Marc Lippert, Laurent Keirsbulck, Maude Jimenez, Yannick Coffinier, Vincent Thomy

A promising Slippery Liquid Infused Surface (SLIS) has been developed, that is both easy-to-produce and environmentally friendly. Using a double replication method, a 200 µm-thick texturized cross-linked PDMS film was obtained, leading to a grid of micrometric hills and deep wells. A comparison…

Surfaces and Interfaces, 2023, 42, Part A, pp.103296. ⟨10.1016/j.surfin.2023.103296⟩. ⟨hal-04215387⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 12/3]

Raffaele Pisano

2023. ⟨hal-04510936⟩

  • Article dans une revue

Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control

Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, F. Alibart, Michel Pioro-Ladrière, Dominique Drouin

Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward scalable quantum computers. Thus, we propose a scalable memristor-based programmable dc…

IEEE Transactions on Electron Devices, 2023, 70 (4), pp.1989-1995. ⟨10.1109/TED.2023.3244133⟩. ⟨hal-04053335⟩

  • Article dans une revue

Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser deposition

Laura Sauze, Nicolas Vaxelaire, Roselyne Templier, Denis Rouchon, François Pierre, Cyril Guedj, Denis Remiens, Guillaume Rodriguez, Marie Bousquet, Florian Dupont

With the deployment of the 5th Generation of mobile applications (5G), the performances of radio-frequency (RF) filters are pushed to their limits. Highly crystalline piezoelectric materials with an electromechanical coupling coefficient higher than aluminium nitride are of high interest. Lithium…

Journal of Crystal Growth, 2023, 601, pp.126950. ⟨10.1016/j.jcrysgro.2022.126950⟩. ⟨hal-03862259⟩

  • Article dans une revue

Deep learning aided topology optimization of phononic crystals

Paweł Kudela, Abdalraheem Ijjeh, Maciej Radzienski, Marco Miniaci, Nicola Pugno, Wieslaw Ostachowicz

In this work, a novel approach for the topology optimization of phononic crystals based on the replacement of the computationally demanding traditional solvers for the calculation of dispersion diagrams with a surrogate deep learning (DL) model is proposed. We show that our trained DL model is…

Mechanical Systems and Signal Processing, 2023, 200, pp.110636. ⟨10.1016/j.ymssp.2023.110636⟩. ⟨hal-04182336⟩

  • Article dans une revue

Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices

Thomas Bordignon, Blandine Duriez, Nicolas Guitard, Romain Duru, Clément Pribat, Jérôme Richy, Shay Reboh, Siddhartha Dhar, Frédéric Monsieur, Thibaud Fache, Zdenek Chalupa, Jean-Michel Hartmann, Pascal Chevalier, Yannick Roelens, Francois Danneville, Sébastien Crémer

A new method to induce tensile stress in a PDSOI NMOS device for RF applications is proposed, which is based on relaxing a SiGe layer built underneath silicon. By means of TCAD simulations, we demonstrate that stress transfer from SiGe to Si occurs by means of at least two different mechanisms:…

Solid-State Electronics, 2023, 210, pp.108787. ⟨10.1016/j.sse.2023.108787⟩. ⟨hal-04253696⟩