Publications

Affichage de 6811 à 6820 sur 16278


  • Communication dans un congrès

Tunable Antennas Using MEMS Switches for LTE Mobile Terminals

Aykut Cihangir, Fabien Ferrero, Cyril Luxey, G. Jacquemod, Emmanuel Larique, Renaud Robin, Patrice Brachat

Two antenna designs, using MEMS switches for operating band reconfigurability are presented in this paper. The study has been carried out in the scope of ARTEMOS project, whose main target is to propose tunable architectures for future mobile terminals. For this purpose, two antenna designs to…

9th Loughborough Antennas and Propagation Conference (LAPC), Nov 2013, Loughborough, United Kingdom. pp.22-26. ⟨hal-01347426⟩

  • Communication dans un congrès

Métasurfaces absorbantes flexibles en ondes millimétriques

Ludovic Burgnies, Jianping Hao, Colin Mismer, Guillaume Ducournau, Eric Lheurette, Didier Lippens

Dans cette communication, nous présentons une étude de faisabilité ainsi que la vérification expérimentale de structures planaires absorbantes dans la gamme des ondes millimétriques réalisées en technologie flexible. L'absorption large bande est obtenue grâce aux différentes fréquences de…

13èmes Journées de Caractérisation Microondes et Matériaux, JCMM2014, 2014, Nantes, France. article 8, 4 p. ⟨hal-01005672⟩

  • Communication dans un congrès

Mesure de la permittivité complexe du polydimethylsiloxane (PDMS) jusqu'à 220 GHz pour la mise en oeuvre d'une électronique souple

Pierre-Yves Cresson, Yovan Orlic, Jean-François Legier, Erick Paleczny, Luc Dubois, Philippe Coquet, Nicolas Tiercelin, Sami Hage-Ali, Philippe Pernod, Vladimir Preobrazhensky, Tuami Lasri

Des lignes coplanaires sont réalisées sur un film souple de Polydimethylsiloxane (PDMS) de 182 μm d'épaisseur. Après avoir mesuré les paramètres [S] de ces lignes, des algorithmes ajustent la permittivité complexe du matériau pour que les valeurs des constantes de propagation extraites des…

13èmes Journées de Caractérisation Microondes et Matériaux, JCMM2014, 2014, Nantes, France. article 9, 4 p. ⟨hal-01005731⟩

  • Communication dans un congrès

High Efficiency Process for Industrial Manufacturing of p-Type Crystalline Silicon Solar Cells Developed in the Frame of PROTERRA Project

N. Le Quang, P. Gall, R. Monna, M. Gauthier, Davy Gérard, S. Williatte, A. Rambaud, G. Goaer, Mustapha Lemiti, B. Pelissier, D. Conte, J. Moyroud, Jean-Pierre Vilcot, M. Pawlik, Mathieu Halbwax

no abstract

29th E-PVSEC, 2014, Amsterdam, The, Netherlands. ⟨hal-01489927⟩

  • Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design…

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

  • Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode.…

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩