Publications

Affichage de 6861 à 6870 sur 16278


  • Article dans une revue

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Ali Soltani, Arnaud Stolz, Joël Charrier, Maghnia Mattalah, Jean-Claude Gerbedoen, Hassan Ali Barkad, Vincent Mortet, Michel Rousseau, Nour Eddine Bourzgui, Ali Benmoussa, Jean-Claude de Jaeger

Optical waveguiding properties of a thick wurtzite aluminum nitride highly [002]-textured hetero-epitaxial film on (001) basal plane of sapphire substrate are studied. The physical properties of the film are determined by X-ray diffraction, atomic force microscopy, microRaman, and photocurrent…

Journal of Applied Physics, 2014, 115 (16), pp.163515. ⟨10.1063/1.4873236⟩. ⟨hal-00987345⟩

  • Communication dans un congrès

200 GHz coherent wireless link using photonics-based emission

Guillaume Ducournau, Y. Yoshimizu, S. Hisatake, F. Pavanello, Emilien Peytavit, Mohammed Zaknoune, T. Nagatsuma, Jean-Francois Lampin

We investigated a coherent THz link at 200 GHz, with variable data rate up to 11 Gbit/s, featuring the combination of a quasi-optic UTC-PD emitter and a high sensitivity electronic receiver. This coherent link relies on an optical frequency comb generator at emission to produce an optical beat note…

39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Sep 2014, Tucson, United States. ⟨10.1109/IRMMW-THz.2014.6956001⟩. ⟨hal-03286172⟩

  • Article dans une revue

Epitaxial hexagonal boron nitride on Ir(111) : a work function template

Fabian Schulz, Robert Drost, Sampsa K. Hämäläinen, Thomas Demonchaux, Ari P. Seitsonen, Peter Liljeroth

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other two-dimensional materials to templating growth of molecular layers. We have studied the structure of…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (23), pp.2354293. ⟨10.1103/PhysRevB.89.235429⟩. ⟨hal-01044795⟩

  • Article dans une revue

Experimental determination of temperature-dependent electron-electron collision frequency in isochorically heated warm dense gold

C. Fourment, F. Deneuville, D. Descamps, F. Dorchies, S. Petit, O. Peyrusse, B. Holst, V. Recoules

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (16), ⟨10.1103/PhysRevB.89.161110⟩. ⟨hal-01561840⟩

  • Article dans une revue

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based…

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩

  • Article dans une revue

Synthesis and electrical conductivity of multilayer silicene

Patrick Vogt, Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Thomas Brühne, Guy Le Lay, B. Grandidier

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces…

Applied Physics Letters, 2014, 104 (2), 021602, 5 p. ⟨10.1063/1.4861857⟩. ⟨hal-00934419⟩

  • Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D…

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

  • Communication dans un congrès

Tailoring thermal conductivity of graphene via defect-and-molecular engineering

Stefan Bringuier, J.F. Robillard, Pierre Deymier, Krishna Muralidharan

The exceptional thermal properties of graphene have attracted enormous interest over the past decade. Consequently, there is an increased push towards utilizing graphene in thermal-management systems such as thermal interface materials and thermoelectrics. While, many recent investigations have…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964528⟩