Publications

• Article dans une revue

Measure of the temperature-depth profile by an S band radiometric receiver for biomedical applications

S. Bri, L. Zenkouar, A. Saadi, L. Bellarbi, M. Habibi, A. Mamouni

Annals of Telecommunications - annales des télécommunications, 2004, 59, pp.467-484. ⟨hal-00133928⟩

• Article dans une revue

Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

F Medjdoub, F. Dessenne, Jean-Luc Thobel, M. Zaknoune, D. Theron

This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced…

Solid-State Electronics, 2004, 48 (5), pp.683-688. ⟨10.1016/j.sse.2003.09.011⟩. ⟨hal-00133956⟩

• Communication dans un congrès

100nm InAlAS/InGaAs double-gate HEMT using transferred substrate

Nicolas Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2004, pp.1023-1026. ⟨hal-00133886⟩

• Communication dans un congrès

Design of K-band distributed amplifiers using FB and BC MOS

C. Pavageau, M. Si Moussa, A. Siligaris, L. Picheta, Francois Danneville, J.P. Raskin, D. Vanhoenaker-Janvier, J. Russat, N. Fel

MEDEA+ T206 SOI Workshop, 2004, Crolles, France. ⟨hal-00133902⟩

• Communication dans un congrès

The Wagon-Wheel transducer as a vector sensor and a directional projector

Anne-Christine Hladky, R. Newnham, D. Markley, R. Meyer, J. Cochran

2004, pp.747-750. ⟨hal-00133850⟩

• Article dans une revue

Broadband frequency filtering and mode matching using finline technology

T. Decoopman, X. Melique, O. Vanbésien, D. Lippens

Microwave and Optical Technology Letters, 2004, 41, pp.234-7. ⟨hal-00133953⟩

• Communication dans un congrès

A computational model for the Si/C/N nanopowder

Mohamed Amara, M. El Ganaoui, D. Hourlier

21st International Congress of Theoretical and Applied Mechanics, ICTAM04, 2004, Warsaw, Poland. ⟨hal-00248023⟩

• Communication dans un congrès

Analysis of hot carrier aging degradation in GaN MESFETs

R. Pierobon, F. Rampazzo, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

2004, pp.143-146. ⟨hal-00141969⟩

• Article dans une revue

Raman characterization of Mg⁺ ion-implanted GaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes…

• Article dans une revue

Electrical characterization of Au/n-GaN Schottky diodes.

B. Akkal, Z. Benamara, H. Abid, A. Talbi, Bernard Gruzza

Materials Chemistry and Physics, 2004, pp.31. ⟨hal-00272575⟩