Publications

• Communication dans un congrès

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, H. Maher, Y. Cordier, N. Defrance, N. Malbert

The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-…

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362. ⟨hal-03362260⟩

• Article dans une revue

The Map3k12 (Dlk)/JNK3 signaling pathway is required for pancreatic beta-cell proliferation during postnatal development

Mathie Tenenbaum, Valérie Plaisance, Raphael Boutry, Valérie Pawlowski, Cécile Jacovetti, Clara Sanchez-Parra, Hélène Ezanno, Julien Bourry, Nicole Beeler, Gianni Pasquetti, Valery Gmyr, Stéphane Dalle, Julie Kerr-Conte, François Pattou, Syu-Ichi Hirai, Romano Regazzi, Amélie Bonnefond, Philippe Froguel, Amar Abderrahmani

Unveiling the key pathways underlying postnatal beta-cell proliferation can be instrumental to decipher the mechanisms of beta-cell mass plasticity to increased physiological demand of insulin during weight gain and pregnancy. Using transcriptome and global Serine Threonine Kinase activity (STK)…

Cellular and Molecular Life Sciences, 2021, 78 (1), pp.287-298. ⟨10.1007/s00018-020-03499-7⟩. ⟨hal-03142227⟩

• Article dans une revue

Van Hove singularities and trap states in two-dimensional CdSe nanoplatelets

Nemanja Peric, Yannick Lambert, Shalini Singh, Ali Hossain Khan, Nathali Alexandra Franchina Vergel, D. Deresmes, Maxime Berthe, Zeger Hens, Iwan Moreels, Christophe Delerue, B. Grandidier, Louis Biadala

Semiconductor nanoplatelets, which offer a compelling combination of the flatness of two-dimensional semiconductors and the inherent richness brought about by colloidal nanostructure synthesis, form an ideal and general testbed to investigate fundamental physical effects related to the…

Nano Letters, 2021, 21 (4), pp.1702-1708. ⟨10.1021/acs.nanolett.0c04509⟩. ⟨hal-03152599⟩

• Article dans une revue

Modeling and experimental analysis of the mass loading effect on micro-ionic polymer actuators using step response identification

Iman Dadras, Sofiane Ghenna, Sébastien Grondel, Eric Cattan, Jaan Raik, Alvo Aabloo, Saoni Banerji

This paper presents a linear electrochemomechanical model for microscale ionic actuators. A frequency-domain approach is used to facilitate model interpretation, simplify model application, and accelerate the generation of actuator-specific models. A system comprising a micro PEDOT:PSS/PEO actuator…

Journal of Microelectromechanical Systems, 2021, 30 (2), pp.243-252. ⟨10.1109/JMEMS.2021.3060897⟩. ⟨hal-03162798⟩

• Article dans une revue

High-Q silicon nitride drum resonators strongly coupled to gates

Xin Zhou, Srisaran Venkatachalam, Ronghua Zhou, Hao Xu, Alok Pokharel, Andrew Fefferman, Mohammed Zaknoune, Eddy Collin

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration…

Nano Letters, 2021, 21 (13), pp.5738-5744. ⟨10.1021/acs.nanolett.1c01477⟩. ⟨hal-03263144⟩

• Article dans une revue

Mm-wave through-load element for on-wafer measurement applications

Marc Margalef-Rovira, Olivier Occello, Abdelhalim Saadi, Vanessa Avramovic, Sylvie Lepilliet, Loïc Vincent, Manuel J. Barragan, Emmanuel Pistono, Sylvain Bourdel, Christophe Gaquière, Philippe Ferrari

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to…

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021, 68 (8), pp.3170-3183. ⟨10.1109/TCSI.2021.3072097⟩. ⟨hal-03202213⟩

• Communication dans un congrès

Single-pole-double-throw RF switches based on monolayer MoS₂

Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande

Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture [1] , [2] . To develop this ideal switch, non-volatile switches…

• Communication dans un congrès

Evolution of localized surface plasmon resonance made of gold nanowire chain embedded in WS2multilayers

Z. Oumekloul, Y. Achaoui, A. Mir, Abdellatif Akjouj

Recently, the transition metal dichalcogenides (TMDs) have emerged as a new class of building blocks for engineering enhanced plasmonic sensors. This class of materials can be made with a low production cost and can be easily hybridized with metallic nanoparticles whereby desired molecules are…

4th International Conference on Materials and Environmental Science, ICMES 2020, Nov 2020, Oujda, Morocco. pp.7507-7510, ⟨10.1016/j.matpr.2021.02.259⟩. ⟨hal-03362269⟩

• Article dans une revue

Piezoresistance in defect-engineered silicon

Heng Li, Abel Thayil, Chris Lew, Marcel Filoche, Brett Johnson, Jeff Mccallum, S. Arscott, Alistair C. H. Rowe

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage (Vt) corresponding to the onset of a space-charge-limited hole current…

Physical Review Applied, 2021, 15 (1), 014046, 9 p. ⟨10.1103/PhysRevApplied.15.014046⟩. ⟨hal-03003310⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 10/3]

Raffaele Pisano

2021. ⟨hal-04510951⟩