Publications

• Communication dans un congrès

[Invited] Assessing electron transport through 2D molecule-nanoparticle networks for reservoir computing sensing (Invited)

Dominique Vuillaume

SPIE Organic Photonics & Electronics, Aug 2020, San Diego, United States. ⟨hal-03253727⟩

• Communication dans un congrès

Structure and electronic properties of pseudocapacitive vanadium nitride films

Maya Marinova, Marielle Huvé, Kevin Robert, Christophe Lethien, David Troadec, Pascal Roussel

The European Microscopy Congress 2020 (EMC2020), Aug 2020, Copenhagen, Denmark. ⟨hal-03584044⟩

• Article dans une revue

Thermal resistance of an interfacial molecular layer by first-principles molecular dynamics

Thuy-Quynh Duong, Carlo Massobrio, Guido Ori, Mauro Boero, Évelyne Martin

The approach-to-equilibrium molecular dynamics (AEMD) methodology is applied in combination with first-principles molecular dynamics (FPMD) to investigate the thermal transfer between two silicon blocks connected by a molecular layer. Our configuration consists of alkanes molecules strongly coupled…

The Journal of Chemical Physics, 2020, 153 (7), pp.074704. ⟨10.1063/5.0014232⟩. ⟨hal-02990565⟩

• Article dans une revue

Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation

Charbel Tannoury, Maximilien Billet, Christophe Coinon, Jean-Francois Lampin, Emilien Peytavit

The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency…

Electronics Letters, 2020, 56, pp.897-899. ⟨10.1049/el.2020.1116⟩. ⟨hal-02997766⟩

• Communication dans un congrès

Investigation of Temperature, Well Width and Composition Effects on the Intersubband Absorption of InGaAs/GaAs Quantum Wells

Lynda Chenini, Abdelkader Aissat, Sofiane Ammi, Jean-Pierre Vilcot

Optical properties of the ternary InxGa1-xAs/GaAs alloys including strain, band gap energy, band offsets, and intersubband absorption coefficient in the conduction band (CB) are theoretically investigated. Effect of temperature, T, and Indium composition, In, of InGaAs on all these parameters is…

2nd International Conference on Electronic Engineering and Renewable Energy Systems, Apr 2020, Saidia, Morocco. pp.325-332, ⟨10.1007/978-981-15-6259-4_34⟩. ⟨hal-03043560⟩

• Communication dans un congrès

Simulation and Optimization of Cds/ZnSnN2 Structure for Solar Cell Applications with SCAPS-1D Software

Abdelmoumene Laidouci, Abdelkader Aissat, Jean-Pierre Vilcot

In this paper, we are interested in simulating and modeling of Cds/ZnSnN2 structure for a solar cell using SCAPS-1D. The ZnSnN2 is considered as one of the promising absorber materials for photovoltaic application due to the high optical efficiency and the low cost. In the present work, we have…

2nd International Conference on Electronic Engineering and Renewable Energy Systems, ICEERE 2020, Apr 2020, Saidia, Morocco. pp.211-222, ⟨10.1007/978-981-15-6259-4_21⟩. ⟨hal-03043563⟩

• Communication dans un congrès

Theoretical modeling and optimization of GaAsPN/GaAs tandem dual-junction solar cells

Ahmed Bahi Azzououm, Abdelkader Aissat, Jean-Pierre Vilcot

This paper presents an optimization and simulation of optical and electrical properties of GaAsPN/GaAs tandem Dual-Junction solar cells such as current density-voltage (J-V), external quantum efficiency (EQE), with an AM1.5 solar spectrum. We comparing the simulated performance of various N…

International Conference on Electronic Engineering and Renewable Energy, ICEERE 2020, Apr 2020, Saidia, Morocco. pp.333-338, ⟨10.1007/978-981-15-6259-4_35⟩. ⟨hal-03043571⟩

• Brevet

Générateur thermoélectrique

Emmanuel Dubois, Jean-François Robillard, Stéphane Monfray, Thomas Skotnicki

United States, Patent n° : US10741740 (B2) 2020-08-11. 2020, N° de priorité : FR20140061760 20141202 - N° de demande : US201816047505 20180727. ⟨hal-05696640⟩

• Chapitre d'ouvrage

GaN-based HEMTs for mm-wave applications

Kathia Harrouche, F Medjdoub

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩

• Article dans une revue

Cellulose nanocrystals/graphene hybrids - A promising new class of materials for advanced applications

Djalal Trache, Vijay Kumar Thakur, Rabah Boukherroub

With the growth of global fossil-based resource consumption and the environmental concern, there is an urgent need to develop sustainable and environmentally friendly materials, which exhibit promising properties and could maintain an acceptable level of performance to substitute the petroleum-…

Nanomaterials, 2020, 10 (8), pp.1523. ⟨10.3390/nano10081523⟩. ⟨hal-03090012⟩