Publications

Affichage de 4741 à 4750 sur 16299


  • Communication dans un congrès

Étude par C-AFM de substrats magnétiques fonctionnalisés par des SAMs photo-commutables

Louis Thomas, David Guérin, D. Deresmes, Jean-Louis Codron, Xavier Wallart, Thierry Melin, Dominique Vuillaume, Stéphane Lenfant

SPIC 2019: Troisième congrès national Sciences et Technologies des systèmes pi-conjugués, Oct 2019, Arras, France. ⟨hal-02776445⟩

  • Article dans une revue

Massless Dirac fermions in III-V semiconductor quantum wells

Sergey S. Krishtopenko, W. Desrat, K. Spirin, C. Consejo, S. Ruffenach, F. Gonzalez-Posada, Benoit Jouault, W. Knap, K. Maremyanin, V. Gavrilenko, G. Boissier, J. Torres, M. Zaknoune, E. Tournié, F. Teppe

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in…

Physical Review B, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩. ⟨hal-02072785⟩

  • Article dans une revue

The Influence of Microstructure on the Passive Layer Chemistry and Corrosion Resistance for Some Titanium-Based Alloys

Nader El-Bagoury, Sameh Ahmed, Ola Ahmed Abu Ali, Shimaa El-Hadad, Ahmed Fallatah, G. Mersal, Mohamed Ibrahim, Joanna Wysocka, Jacek Ryl, Rabah Boukherroub, Mohammed A. Amin

The effect of microstructure and chemistry on the kinetics of passive layer growth and passivity breakdown of some Ti-based alloys, namely Ti-6Al-4V, Ti-6Al-7Nb and TC21 alloys, was studied. The rate of pitting corrosion was evaluated using cyclic polarization measurements. Chronoamperometry was…

Materials, 2019, 12 (8), pp.1233. ⟨10.3390/ma12081233⟩. ⟨hal-02373220⟩

  • Communication dans un congrès

Resonant Devices for Stealth and Discretion In Underwater Acoustics

Anne-Christine Hladky, Charles Croënne, Bertrand Dubus

5th International Conference on Phononic Crystals/Metamaterials, Phonon Transport, and Topological Phononics, PHONONICS 2019, Jun 2019, Tucson, United States. ⟨hal-04543964⟩

  • Article dans une revue

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its…

Microelectronics Reliability, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩. ⟨hal-02356751⟩