Publications

• Article dans une revue

Bioelectrical memory effects behind fractional-order transients emulating synaptic plasticity in brain-inspired electrochemical dendrites

Antoine Baron, Sébastien Pecqueur, Enrique Balaguera

Electrochimica Acta, 2026, pp.148961. ⟨10.1016/j.electacta.2026.148961⟩. ⟨hal-05607418⟩

• Communication dans un congrès

Cracks Propagation and Coalescence in a Griffith-Based Approach

Claudia Binetti

We analyse the effectiveness of a recently proposed model for crack nucleation and propagation in determining possible fracture evolution strategies. By focusing on energetic considerations, we compare different scenarios of fracture evolution and determine the energy favourable strategies.

XXVI AIMETA Conference 2024 (AIMETA 2024), Sep 2024, Naples, Italy. pp.702-711, ⟨10.1007/978-3-032-17231-0_89⟩. ⟨hal-05666740⟩

• Article dans une revue

A Survey of Structural Attacks on Post-Quantum Cryptosystems Based on Goppa Codes: Evolution, Scope, and Impact on their Variants in the Hamming Metric

Latifa Mostari, Alban Goupil, Abdelmalik Taleb-Ahmed

With the advent of quantum computing, public-key cryptographic systems such as RSA (Rivest–Shamir–Adleman) and ECC (Elliptic Curve Cryptography) have become vulnerable to Shor’s quantum algorithm, leading to a growing interest in post-quantum cryptography. Among the post-quantum approaches, code-…

Archives of Computational Methods in Engineering, 2026, ⟨10.1007/s11831-026-10567-x⟩. ⟨hal-05620456⟩

• Pré-publication, Document de travail

Benzo-bis(imidazole) self-assembled monolayers molecular junctions in meta or para conformation: effects of protonation on the electrical and thermal conductances.

Sergio Gonzalez Casal, Simon Pascal, Olivier Siri, Dominique Vuillaume

We report the thermal conductances of molecular junctions made of self-assembled monolayers of benzo-bis(imidazole) molecules, without side groups or functionalized with two phenylamine side groups. In the two cases, when the molecules are connected to the electrodes by thiol anchoring groups in…

2026. ⟨hal-05571938⟩

• Thèse

Process-Plasma-Material Properties Relationship in the Deposition of Bismuth Sodium Titanate Thin Films by Magnetron Sputtering, Relation procédé–plasma–propriétés des matériaux lors du dépôt de couches minces de titanate de bismuth sodium par pulvérisation cathodique magnétron

Zikriya Khan

This work is dedicated to the synthesis and characterization of ferroelectric piezoelectric Bi0.5Na0.5TiO3 (BNT) thin films. The films were deposited on Si substrates using homemade powder targets by RF magnetron sputtering in an Ar discharge. The target surface analysis, plasma diagnostics, and…, Ce travail est consacré à la synthèse et à la caractérisation de couches minces ferroélectriques et piézoélectriques de Bi₀.₅Na₀.₅TiO₃ (BNT). Les films ont été déposés sur des substrats de silicium (Si) à l’aide de cibles élaborées à partir de poudres synthétisées au laboratoire, par pulvérisation…

Materials. Université Polytechnique Hauts-de-France; Université de Mons (Belgique), 2026. English. ⟨NNT : 2026UPHF0019⟩. ⟨tel-05574229⟩

• Article dans une revue

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

B Orfao, Mahmoud ABOU DAHER, H Bouillaud, Y Roelens, P Prystawko, R Kucharski, M Bockowski, M Zaknoune

<div><p>In this work, we analyze the reverse current mechanisms in gallium nitride (GaN) Schottky barrier diodes grown on sapphire and native GaN substrates. For the sapphire-substrate sample, two conduction mechanisms are identified: Poole-Frenkel emission (PFE) and trap-assisted…

Journal of Physics D: Applied Physics, 2026, 59 (12), pp.12LT01. ⟨10.1088/1361-6463/ae506d⟩. ⟨hal-05573797⟩

• Thèse

Etude de l’hétéro-intégration et la gestion thermique des DHBTs InP sur Si pour l’amplification de puissance en gamme sub-THz, Study of Heterogeneous Integration and Thermal Management of InP-on-Si DHBTs for Power Amplification in the sub-THz Range

Abdelmalek Zemour

Cette thèse s’inscrit dans une première collaboration entre STMicroelectronics et l’IEMN autour des technologies III-V, avec pour objectif de combiner dans le futur les transistors III-V aux technologies silicium afin de répondre aux besoins des futurs systèmes de télécommunications. Les travaux…, This thesis is part of a first collaboration between STMicroelectronics and IEMN on III-V technologies, with the long-term objective of combining III-V transistors with silicon technologies to meet the needs of future telecommunication systems. The work therefore aims to integrate THz devices based…

Physique [physics]. Université de Lille, 2026. Français. ⟨NNT : ⟩. ⟨tel-05551236⟩

• Article dans une revue

Orbiting, colliding, and merging liquid lenses on a soap film: Toward gravitational analogs

Jean-Paul Martischang, Benjamin Reichert, Ilies Haouche, Germain Rousseaux, Alexis Duchesne, Michael Baudoin

Gravity governs the large-scale structure of the Universe, driving the formation and interactions of galaxies. These interactions generate distinctive features-such as complex orbits, tidal spiral arms, and bridges-that are commonplace at astrophysical scales but rarely observed at human scales.…

PNAS Nexus, 2026, 5 (4), pgag079. ⟨10.1093/pnasnexus/pgag079⟩. ⟨hal-05606989⟩

• Article dans une revue

Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Thomas Kaltsounis, Vishwajeet Maurya, Hala El Rammouz, Mohammed El Amrani, Maroun Dagher, Florian Bartoli, Thibaud Guillemin, Adrien Bidaud, Eric Frayssinet, Farid Medjdoub, Hassan Maher, Jean Marie Bluet, Dominique Planson, Julien Buckley, Yvon Cordier, Matthew Charles, Cyril Buttay

In this work, using micro-Raman spectroscopy mapping, we propose a methodology to separate the stress effect from the n-doping effect on A1LO and E2H GaN phonon modes frequency for low n-doped (&lt;1017 cm−3) GaN layers grown on various substrates (GaN, sapphire, and silicon). This methodology…

Applied Physics Letters, 2026, 128 (12), ⟨10.1063/5.0325369⟩. ⟨hal-05577908⟩

• Article dans une revue

Exploiting the insulator–metal transition of VO2 in photocatalytic methane conversion

My Nghe Tran, Duc Manh Nguyen, Matthieu Kpessu Ahounou, Ernesto de la Torre Miranda, Melissa Alzate Banguero, David Troadec, Christophe Coinon, Ahmed Addad, Karima Ben Tayeb, Alexandre Boulle, Pascale Diener, David Mele, Louis Thomas, Xavier Wallart, Lionel Aigouy, Alexandre Zimmers, Aurelian Crunteanu, Vitaly Ordomsky, Bruno Grandidier

Upon illumination, photocatalysts generate charge carriers for redox reactions, but their efficiency is often limited by carrier recombination and poor minority-carrier diffusion, despite many existing junction engineering strategies. Here we exploit the insulator–metal transition in VO2 to produce…

Nature Energy, 2026, ⟨10.1038/s41560-026-02013-w⟩. ⟨hal-05559160⟩