Publications

• Article dans une revue

Characterisation of micromachining processes during KrF excimer laser ablation of TiNi shape memory alloy thin sheets and films

S.T. Davies, E.C. Havey, H. Jin, J.P. Hayes, M.K. Ghantasala, I. Roch, L. Buchaillot

Smart Materials and Structures, 2002, 11, pp.708-714. ⟨hal-00148762⟩

• Communication dans un congrès

Room temperature passivation of the silicon surface by chemisorption of an organic monolayer

S. Kar, D. Vuillaume

202nd ElectroChemical Society Meeting, 2002, Salt Lake City, UT, United States. ⟨hal-00148726⟩

• Article dans une revue

Adhesive forces investigation on a silicon tip by contact mode atomic force microscope

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot

An atomic force microscope operating in contact mode is used in this letter for probing the adhesive forces at the apex of a silicon nanotip with typical radius smaller than 15 nm, fabricated using a combination of high-resolution electron beam lithography and plasma dry etching. The amplitude of…

Applied Physics Letters, 2002, 81, pp.2623-2625. ⟨10.1063/1.1508806⟩. ⟨hal-00148768⟩

• Communication dans un congrès

Influence of the hole injection layer in thienylene phenylene light emitting diodes

K. Lmimouni, M. Berliocchi, C. Dufour, D. Vuillaume, F. Tran Van, J. Grazulevicius, C. Chevrot, J.P. Lere-Porte, S. Wakim

INF Meeting, 2002, Bari, Italy. ⟨hal-00148713⟩

• Article dans une revue

Influence of the microstructure and of an ION beam etching on the domain propagation in PZT thin films

Brice Gautier, Caroline Soyer, Eric Cattan, Denis Remiens, Jean-Claude Labrune

PbZrTiO 3 (PZT) thin films have been grown by RF-magnetron sputtering and sputter etched by Argon ion beam. The topography of the bombarded material is studied by Atomic Force Microscope (AFM), several ferroelectric domains are created by applying a sufficiently high voltage between the tip of the…

Integrated Ferroelectrics, 2002, 50 (1), pp.231-240. ⟨10.1080/10584580215530⟩. ⟨hal-00149627⟩

• Article dans une revue

Reactive ion beam etching effects on maskless PZT properties

Caroline Soyer, Eric Cattan, Denis Remiens

Ion beam etching of sputtered Pb(Zr 0.54 ,Ti 0.46 )O 3 has been performed using pure Ar gas. The etch rate and selectivity ratios between PZT and masks as a function of the process parameters (current density, acceleration voltage, gas pressure) has been investigated. We have evaluated the PZT…

Integrated Ferroelectrics, 2002, 48, pp.221-229. ⟨10.1080/10584580215465⟩. ⟨hal-00149624⟩

• Article dans une revue

Bubble size distribution estimation via void rate dissipation in gas saturated liquid. Application to ultrasonic cavitation bubble fields

S. Labouret, J. Frohly

European Physical Journal: Applied Physics, 2002, 19, pp.39-54. ⟨hal-00149903⟩

• Communication dans un congrès

Inverse treatment in microwave or millimeter wave radiometry

G. Tittelein, Roger Ringot, J.C. van de Velde, Bertrand Bocquet

PhotonIcs and Electromagnetics Research Symposium, Jul 2002, Cambridge, United Kingdom. pp.29. ⟨hal-00147872⟩

• Article dans une revue

Path loss model of the 60 GHz indoor radio channel

M. Fryziel, Christophe Loyez, Laurent Clavier, N. Rolland, P. Rolland

Microwave and Optical Technology Letters, 2002, 34, pp.158-162. ⟨hal-00147879⟩

• Communication dans un congrès

High performance HBV multipliers monolithically integrated into a host quartz substrate

T. David, S. Arscott, J.M. Munier, Thibaut Decoopman, Tahsin Akalin, Patrick Mounaix, Xavier Mélique, Olivier Vanbésien, Gérard Beaudin, Didier Lippens

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding…

IEEE Tenth International Conference on Terahertz Electronics, Sep 2002, Cambridge, United Kingdom. pp.113-116, ⟨10.1109/THZ.2002.1037604⟩. ⟨hal-00148639⟩