Publications

Affichage de 7181 à 7190 sur 16435


  • Communication dans un congrès

Fabrication and characterization of CVD grown graphene based field-effect transistor

Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, Emmanuelle Pichonat, Dominique Vignaud, Henri Happy

In this work, we present both fabrication process and characterization of graphene field-effect transistors. Large scale monolayer graphene was grown by chemical vapor deposition (CVD) on Cu foils and transferred over pre-patterned back-gated devices on Si/SiO2 substrate. Scanning electron…

44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014, Oct 2014, Rome, Italy. pp.367-370, ⟨10.1109/EuMC.2014.6986446⟩. ⟨hal-03335830⟩

  • Article dans une revue

Silicon-microtube scaffold decorated with anatase TiO2 as a negative electrode for a 3D litium-ion microbattery

Etienne Eustache, Pascal Tilmant, Laurence Morgenroth, Pascal Roussel, Gilles Patriarche, David Troadec, Nathalie Rolland, Thierry Brousse, Christophe Lethien

An optimized scaffold based on silicon microtubes is designed to increase the surface capacity of 3D lithium-ion microbatteries. High-depth, mechanically robust microstructures are fabricated using microelectronic facilities. Conformal deposition of anatase TiO2 is achieved using atomic layer…

Advanced Energy Materials, 2014, 4, 1301612, 11 p. ⟨10.1002/aenm.201301612⟩. ⟨hal-00999999⟩

  • Communication dans un congrès

Organic synapstor for unconventional computing and biocompatible applications

Dominique Vuillaume

21st Korean Conference on Semiconductors, KCS 2014, International Symposium on Next Generation Terabit Memory Technology, 2014, Seoul, South Korea. ⟨hal-00957813⟩

  • Article dans une revue

Terahertz wireless communication using GaAs transistors as detectors

L. Tohme, S. Blin, Guillaume Ducournau, P. Nouvel, D. Coquillat, S. Hisatake, T. Nagatsuma, A. Pénarier, L. Varani, W. Knap, Jean-Francois Lampin

The detection of high data-rate wireless communication using a terahertz- frequency carrier, and a GaAs transistor as a detector, is reported. Communications are investigated around 0.2 and 0.3087 THz. For the first time, an error-free transmission at data rates up to 8.2 Gbit/s is demonstrated,…

Electronics Letters, 2014, 50, pp.323-325. ⟨10.1049/el.2013.3702⟩. ⟨hal-00954475⟩

  • Chapitre d'ouvrage

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic

Emmanuel Dubois, Aurelien Lecavelier Des Etangs-Levallois, Justine Philippe, Sylvie Lepilliet, Yoann Tagro, Francois Danneville, J.F. Robillard, Christine Raynaud, Daniel Gloria, Jacek Ratajczak

Invariance of DC and RF characteristics of mechanically flexible CMOS technology on plastic'. Functional nanomaterials and devices for electronics, sensors and energy harvesting, 2014. ⟨hal-04249256⟩