Publications

Affichage de 9811 à 9820 sur 16555


  • Communication dans un congrès

Bond graph model of a thin SHM piezoelectric energy harvester

T. Sainthuile, Christophe Delebarre, Sébastien Grondel, Christophe Paget

8th International Workshop on Structural Health Monitoring, IWSHM 2011, 2011, Stanford, CA, United States. pp.618-625. ⟨hal-00800437⟩

  • Communication dans un congrès

Influence de l'indium et l'azote sur la structure à puits quantique à base de Ga1-xInxAs1-xNy/GaAs

Abdelkader Aissat, Said Nacer, Mohamed Seghilani, Jean-Pierre Vilcot

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A4, papier 37, 1-4. ⟨hal-00591372⟩

  • Communication dans un congrès

Interference modeling and relay selection issue for amplify-and-forward IR-UWB sensor networks

Jie Chen, Laurent Clavier, X. Yong, A. Burr, N. Rolland, P.A. Rolland

4th IFIP International Conference on New Technologies, Mobility and Security, NTMS 2011, 2011, France. pp.1-5, ⟨10.1109/NTMS.2011.5721051⟩. ⟨hal-00579047⟩

  • Article dans une revue

Application of the finite differences method (FDTD) for the modeling of SAR in biological tissues

S. Kassimi, S. Bri, M. Habibi, A. Mamouni

Physical and Chemical News, 2011, 60, pp.31-40. ⟨hal-00783438⟩

  • Communication dans un congrès

Study in the THz domain of metamaterials exhibiting a negative refractive index

F. Garet, J.L. Coutaz, S. Wang, Eric Lheurette, D. Lippens

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807135⟩

  • Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

  • Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the…

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩