Publications

• Thèse

Développement de bancs de caractérisation pour la mesure de bruit et la détection de puissance entre 130 GHz et 320 GHz, Development of characterization benches for noise measurement and power detection between 130 GHz and 320 GHz

João Carlos Azevedo Goncalves

Grâce aux progrès des technologies silicium, il est désormais possible de concevoir des circuits complexes dans la bande de fréquence millimétrique au-delà de 110 GHz. La conception de ces systèmes repose sur l’utilisation de modèles précis et fiables des dispositifs passif et actif tels que les…, Thanks to advances in silicon technologies, it is now possible to design complex circuits in the millimeter frequency band above 110 GHz. The design of these systems relies on the use of accurate and reliable models of passive and active devices such as MOS or bipolar transistors. In order to…

Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI116⟩. ⟨tel-03611229⟩

• Communication dans un congrès

[Invited] Material processing by atmospheric pressure plasma jets

Jean-Michel Pouvesle, Azadeh Valinataj-Omran, Céline Vivien, Sébastien Dozias, Robert Eric

Plasma Enhanced Chemical Vapour Deposition (PECVD) processes have been used for decades for surface processing in a wide range of industrial applications like semiconductor films, low-k films, barrier diffusion. Thin film deposition is especially of high interest for biomedical applications for the…

Workshop in memory of R. d'Agostino, Nagoya Institue of Technology, Mar 2019, Nagoya, Japan. ⟨hal-02958285⟩

• Communication dans un congrès

An adaptive threshold for change detection methods using an entropy criterion - Application to fault-tolerant fusion in mobile robotics

Bilal Daass, Pomorski Denis, Kamel Haddadi

1st International Conference on Advances in Signal Processing and Artificial Intelligence, ASPAI’2019 (IFSA), Mar 2019, Barcelona, Spain. pp.93-97. ⟨hal-02435649⟩

• Communication dans un congrès

osquery

Mickaël Masquelin

17ème journée thématique Retours d’expériences, Mar 2019, Compiègne, France. ⟨hal-02072188⟩

• Communication dans un congrès

Structure and Dopant Engineering in PEDOT-based Materials, Strategies to Enhance their Conductivity and Application in Thermoelectric Devices

Renaud Demadrille, Magatte Gueye, Amélie Schulteiss, Olivier Bardagot, Jérôme Faure-Vincent, Stéphanie Pouget, Alexandre Carella, Jean-Pierre Simonato

Conducting polymers, known for many years for their interesting electrical, optoelectronic, and mechanical properties, and good processability even on flexible substrates, are nowadays studied for their thermoelectrical properties. Among them, poly(3,4-ethylenedioxythiophene) (PEDOT) is certainly…

1st International Conference on Advances in Organic and Hybrid Electronic Materials, Mar 2019, Dubrovnik, France. ⟨10.29363/nanoge.aohm.2019.039⟩. ⟨hal-04742874⟩

• Article dans une revue

Unsteady flows measurements using a calorimetric wall shear stress micro-sensor

Cécile Ghouila-Houri, Abdelkrim Talbi, Romain Viard, Quentin Gallas, Eric Garnier, Alain Merlen, Philippe Pernod

A microscale low power high temperature gradient calorimetric (HTGC) sensor measuring both mean and fluctuating bidirectional wall shear stress is presented. The micromachined sensor is composed of three free-standing 3 µm × 1 mm micro-wires mechanically supported using perpendicular micro-bridges…

Experiments in Fluids, 2019, 60 (4), pp.1-10. ⟨10.1007/s00348-019-2714-5⟩. ⟨hal-02476029⟩

• Article dans une revue

Electron Transport through Self-Assembled Monolayers of Tripeptides

Evgeniy Mervinetsky, Israel Alshanski, Stéphane Lenfant, David Guérin, L. Medrano Sandonas, Arezoo Dianat, Israel Yitzchaik, Rafael Gutierrez, Gianaurelio Cuniberti, Israel Hurevich, S. Yitzchaik, Dominique Vuillaume

We report how the electron transport through a solid-state metal/Gly-Gly-His tripeptide (GGH) monolayer/metal junction and the metal/GGH work function are modified by the GGH complexation with Cu2+ ions. Conducting AFM is used to measure the current-voltage histograms. The work function is…

Journal of Physical Chemistry C, 2019, 123 (14), pp.9600-9608. ⟨10.1021/acs.jpcc.9b01082⟩. ⟨hal-02128012⟩

• Article dans une revue

Doping as a strategy to tune color of 2D colloidal nanoplatelets

Marion Dufour, Eva Izquierdo, Clément Livache, Bertille Martinez, Mathieu G Silly, Thomas Pons, Emmanuel Lhuillier, Christophe Delerue, Sandrine Ithurria

Among colloidal nanocrystals, 2D nanoplatelets (NPL) made of II-VI compounds, appear as a special class of emitters with especially narrow photoluminescence signal. However the PL signal in the case of NPL is only tunable by discrete step. Here we demonstrate that doping is a viable path to finely…

ACS Applied Materials & Interfaces, 2019, 11 (10), pp.10128-10134. ⟨10.1021/acsami.8b18650⟩. ⟨hal-02030568⟩

• Thèse

Growth and transfer of graphene and hexagonal boron nitride by chemical vapor deposition : applications to thermally efficient flexible electronics, Croissance et transfert de graphène et nitrure de bore hexagonal : applications thermiques pour l'électronique flexible

Théo Levert

A major challenge is to find a way to grow those materials in order to achieve an easy and economically attractive way to produce large area of those materials with a good quality. Another challenge is to transfer those materials on substrate compatible with electronics (mainly SiO2). We will focus…, L'électronique flexible est devenue un sujet au cœur des recherches actuelles. Dans ce but, plusieurs matériaux ont été utilisés tels que le PEN, PET ou le polyimide (PI). Ces matériaux présentent une bonne flexibilité et une compatibilité chimique avec les différents procédés utilisés en…

Micro and nanotechnologies/Microelectronics. Université de Lille, 2019. English. ⟨NNT : 2019LILUI007⟩. ⟨tel-03621668⟩

• Thèse

Contribution au BIST in-situ : intégration sur silicium d’un banc de caractérisation en bruit en bande D, In-situ BIST contribution: silicon integration of a D-band noise characterization bench

Simon Bouvot

Les progrès des technologies Silicium permettent aujourd’hui de concevoir des circuits électroniques fonctionnant en bande de fréquence millimétrique, grâce à des composants de plus en plus performants. Ces évolutions sont possibles grâce aux performances des transistors, dont les fréquences de…, The progress of the silicon technologies allows today the design of electronic circuits working in the millimeter-wave frequency band, thanks to more and more efficient components. These evolutions are possible thanks to the performances of transistors, which operating frequencies beyond 300 GHz.…

Sciences de l'ingénieur [physics]. Université de Lille, 2019. Français. ⟨NNT : ⟩. ⟨tel-03195394⟩