Publications

• Communication dans un congrès

Nouvelle technologie de contact pour CMOS FD-SOI 10nm et en deçà le contact dipolaire

Julien Borrel, Louis Hutin, Magali Grégoire, Fabrice Nemouchi, Olivier Rozeau, Emmanuel Dubois

Il a récemment été démontré [1] que l'insertion d'une bicouche de diélectriques entre le métal et le semiconducteur d'un contact pouvait induire une réduction significative de la résistance spécifique. Cet ajout permet dans un premier temps de relâcher l'ancrage du niveau de…

17es Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01020275⟩

• Article dans une revue

From 'petal effect' to 'lotus effect' on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

Christophe Frankiewicz, Farzam Zoueshtiagh, Abdelkrim Talbi, Jeremy Streque, Philippe Pernod, Alain Merlen

A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named 'Silastic S' for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new…

Journal of Micromechanics and Microengineering, 2014, 24 (11), ⟨10.1088/0960-1317/24/11/115008⟩. ⟨hal-03277849⟩

• Communication dans un congrès

Monitoring conductance switching by light in azobenzene derivative-gold nano-particle self-assembled networks

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium M - Molecular materials - Towards quantum properties (MOLMAT-Q), 2014, Lille, France. ⟨hal-00957796⟩

• Communication dans un congrès

Redox-coated nanoelectrode array : a coupled electrochemical and molecular electronics study

Jorge Trasobares, Ragavendran Sivakumarasamy, Claire Whal, Alexis Vlandas, Thierry Martin, J.P. Nys, Dominique Vuillaume, Didier Theron, Nicolas Clément

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium M - Molecular materials - Towards quantum properties (MOLMAT-Q), 2014, Lille, France. ⟨hal-00957799⟩

• Communication dans un congrès

Atomic switch : synaptic functionalities and integration strategies

Selina La Barbera, David Guérin, Dominique Vuillaume, F. Alibart

In recent years, research in the field of neuro-inspired computing has generated a lot of interest and seems to be a promising candidate to complement and to provide enhanced performances and new functionalities to the existing CMOS/Von Neumann processor, such as image recognition or datas…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium S - Memristormaterials, mechanisms and devices for unconventional computing, 2014, Lille, France. ⟨hal-00957801⟩

• Article dans une revue

Influence of processing gases on the properties of cold atmospheric plasma SiOxCy coatings

H. Hamze, Maude Jimenez, D. Deresmes, Arnaud Beaurain, Nicolas Nuns, Michel Traisnel

Thin layers of SiOxCy (y = 4−x and 3 ≤ x ≤ 4) were applied using a cold atmospheric plasma torch on glass substrates. The aim was to investigate using Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (Tof-Sims) the influence of…

Applied Surface Science, 2014, Applied Surface Science, 315 (1), pp.531-537. ⟨10.1016/j.apsusc.2013.12.108⟩. ⟨hal-03055748⟩

• Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

• Communication dans un congrès

Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance

Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, Dominique Vignaud, Henri Happy

4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962375⟩

• Communication dans un congrès

Impact of spacing between array elements on the performances of diversity schemes in tunnels

M. Lienard, Jose-Maria Molina-Garcia-Pardo, C. Sanchis-Borras, Pierre Degauque

To increase channel capacity in tunnels, MIMO seems to be a promising technique despite the low angular spread of the rays. Indeed, for transmitting frequencies on the order or larger than 1 GHz, the tunnel behaves as an oversized waveguide and the concept of spatial diversity can be replaced by…

18th International Conference on Circuits, Systems, Communications and Computers, CSCC 2014, 2014, Santorini Island, Greece. pp.30-33. ⟨hal-01055044⟩

• Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩