Publications

Affichage de 7251 à 7260 sur 16442


  • Communication dans un congrès

Phosphorus-hyperdoped Si nanocrystals : a model for localized surface plasmon resonance

X. Pi, Christophe Delerue

It has been recently realized that semiconductor nanocrystals can be doped with point defects or impurities up to a very high level, sometimes above the bulk solubility limit. In parallel, hyperdoping has also emerged as a promising means to change the electrical and optical properties of Si. In…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961394⟩

  • Communication dans un congrès

Croissance localisée d'InAs par épitaxie par jets moléculaires

Maria Fahed, L. Desplanque, Xavier Wallart

Ce travail porte sur l'étude de la croissance localisée d'InAs sur InAs déposé par épitaxie par jets moléculaires (EJM). Nous présentons la caractérisation de la morphologie des surfaces par microscopie électronique à balayage (MEB).

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018426⟩

  • Communication dans un congrès

A 1D optomechanical crystal with a complete phononic band gap

Jordi Gomis-Bresco, Daniel Navarro Urrios, Mourad Oudich, Said El-Jallal, Amadeu Griol, Daniel Puerto, Emigdio Chávez-Ángel, Yan Pennec, Bahram Djafari-Rouhani, Francesc Alzina, Alejandro Martinez, Clivia Sotomayor-Torres

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015239⟩

  • Communication dans un congrès

InAs based Esaki tunnel diodes

Vinay Kumar Chinni, L. Desplanque, Mohamed Zaknoune, Xavier Wallart

We present simulation results of InAs based Esaki tunnel diodes. InAs homojunction and InAs/AlGaSb heterojunction are considered and we investigate the role of source and drain doping levels as well as band energy discontinuities on the tunneling current of the device. The results are very…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018430⟩

  • Communication dans un congrès

Memristive devices : an interconnect solution for matrix-based architectures ?

Sébastien Le Beux, F. Alibart, Dominique Vuillaume, Catherine Dubourdieu, Ian O'Connor

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium S - Memristormaterials, mechanisms and devices for unconventional computing, 2014, Lille, France. ⟨hal-00957794⟩

  • Communication dans un congrès

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

4th International Meeting on Dielectric Materials, May 2013, Marrakech, Morocco. ⟨hal-03659197⟩

  • Communication dans un congrès

Theoretical study of the basic mechanisms of DNA damage by therapeutic radiation beams

F. Manca, Stefano Giordano, Pier Luca Palla, Grégoire Perret, E. Lartigau, Dominique Collard, H. Fujita, Fabrizio Cleri

Cancer treatments by photon radiation beams in radiotherapy is currently grounded on a rather empirical understanding of the basic mechanisms of DNA damages. It is well assessed that radiation induces single-strand and double-strand breaks in DNA, being however the various mechanisms largely…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium N - Converging technology for nanobio-applications, 2014, Lille, France. ⟨hal-00966158⟩

  • Communication dans un congrès

Integrated measurement platform for thermal conductivity measurements in thin-film crystalline silicon and silicon-germanium

Maciej Haras, Valeria Lacatena, Stéphane Monfray, J.F. Robillard, Thomas Skotnicki, Emmanuel Dubois

Thermoelectric conversion requires materials with low thermal conductivity k high electrical conductivity s and thermopower P. Performance of thermoelectric material is evaluated by the zT=P^2sT/k figure-of-merit. Bi2Te3 or Sb2Te3 are usually used near room temperature but they are harmful,…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France. ⟨hal-00964577⟩