Publications

Affichage de 11 à 20 sur 16075


  • Pré-publication, Document de travail

Competing effects of charge-carrier and impurity scattering limiting phonon heat conduction in heavily-doped silicon

Raja Sen, Juan Carlos Acosta Abanto, Mélanie Brouillard, Séverine Gomès, Jean-François Robillard, Alessandro Ciavatta, Lorenzo Paulatto, Nathalie Vast, Jérôme Saint-Martin, Jelena Sjakste, Pierre-Olivier Chapuis

With respect to undoped semiconductors, thermal transport by phonons is limited by two additional mechanisms when doping increases: charge-carrier and impurity scattering. Previous works provided contradicting conclusions on the dominant doping-induced scattering mechanism in silicon. In this work…

2026. ⟨hal-05451267⟩

  • Article dans une revue

On the importance of Ni–Au–Ga interdiffusion in the formation of a Ni–Au/p-GaN ohmic contact

Jules Duraz, Hassen Souissi, Maksym Gromovyi, David Troadec, Téo Baptiste, Géraldine Hallais, Nathaniel Findling, Phuong Vuong, Rajat Gujrati, Thi May Tran, Jean-Paul Salvestrini, Maria Tchernycheva, Suresh Sundaram, Abdallah Ougazzaden, Gilles Patriarche, Sophie Bouchoule

<div xmlns="http://www.tei-c.org/ns/1.0"><p>High-resolution transmission electron microscopy (TEM) coupled to energy dispersive X-ray spectroscopy (EDX) is used to clarify the exact role of Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing under an…

Journal of Applied Physics, 2026, 139 (2), ⟨10.1063/5.0295857⟩. ⟨hal-05473565⟩